NP160N04TUG-E1-AY
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- Mfr.Part #
- NP160N04TUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 160A TO263-7
- Stock
- 5,769
- In Stock ：
- 5,769
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Turn On Delay Time :
- 47 ns
- Fall Time (Typ) :
- 19 ns
- Terminal Position :
- Single
- Operating Mode :
- ENHANCEMENT MODE
- DS Breakdown Voltage-Min :
- 40V
- Mount :
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 80A, 10V
- Operating Temperature :
- 175°C TJ
- Avalanche Energy Rating (Eas) :
- 372 mJ
- Number of Elements :
- 1
- Transistor Application :
- SWITCHING
- Packaging :
- Tape and Reel (TR)
- JESD-609 Code :
- e3
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 270nC @ 10V
- Published :
- 2007
- Pin Count :
- 7
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Input Capacitance (Ciss) (Max) @ Vds :
- 15750pF @ 25V
- Pulsed Drain Current-Max (IDM) :
- 640A
- Drain to Source Voltage (Vdss) :
- 40V
- Turn-Off Delay Time :
- 94 ns
- Factory Lead Time :
- 16 Weeks
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Radiation Hardening :
- No
- Mounting Type :
- Surface Mount
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 1.8W Ta 220W Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Case Connection :
- DRAIN
- Rise Time :
- 67ns
- Terminal Form :
- Gull wing
- Vgs (Max) :
- ±20V
- Number of Terminations :
- 6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Continuous Drain Current (ID) :
- 160A
- HTS Code :
- 8541.29.00.95
- ECCN Code :
- EAR99
- Terminal Finish :
- MATTE TIN
- RoHS Status :
- ROHS3 Compliant
- Drain-source On Resistance-Max :
- 0.002Ohm
- JESD-30 Code :
- R-PSSO-G6
- Datasheets
- NP160N04TUG-E1-AY
N-Channel Tape & Reel (TR) 2m Ω @ 80A, 10V ±20V 15750pF @ 25V 270nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)
NP160N04TUG-E1-AY Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 372 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 15750pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 94 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 640A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 47 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP160N04TUG-E1-AY Features
the avalanche energy rating (Eas) is 372 mJ
a continuous drain current (ID) of 160A
the turn-off delay time is 94 ns
based on its rated peak drain current 640A.
a 40V drain to source voltage (Vdss)
NP160N04TUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP160N04TUG-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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