NP160N04TUG-E1-AY

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Mfr.Part #
NP160N04TUG-E1-AY
Manufacturer
Intersil (Renesas Electronics Corporation)
Package / Case
TO-263-7, D2Pak (6 Leads + Tab)
Datasheet
Download
Description
MOSFET N-CH 40V 160A TO263-7
Stock
5,769
In Stock :
5,769

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Manufacturer :
Intersil (Renesas Electronics Corporation)
Product Category :
Transistors - FETs, MOSFETs - Single
Turn On Delay Time :
47 ns
Fall Time (Typ) :
19 ns
Terminal Position :
Single
Operating Mode :
ENHANCEMENT MODE
DS Breakdown Voltage-Min :
40V
Mount :
Surface Mount
Current - Continuous Drain (Id) @ 25°C :
160A Tc
Vgs(th) (Max) @ Id :
4V @ 250µA
Rds On (Max) @ Id, Vgs :
2m Ω @ 80A, 10V
Operating Temperature :
175°C TJ
Avalanche Energy Rating (Eas) :
372 mJ
Number of Elements :
1
Transistor Application :
SWITCHING
Packaging :
Tape and Reel (TR)
JESD-609 Code :
e3
FET Type :
N-Channel
Gate Charge (Qg) (Max) @ Vgs :
270nC @ 10V
Published :
2007
Pin Count :
7
Drive Voltage (Max Rds On,Min Rds On) :
10V
Input Capacitance (Ciss) (Max) @ Vds :
15750pF @ 25V
Pulsed Drain Current-Max (IDM) :
640A
Drain to Source Voltage (Vdss) :
40V
Turn-Off Delay Time :
94 ns
Factory Lead Time :
16 Weeks
Package / Case :
TO-263-7, D2Pak (6 Leads + Tab)
Radiation Hardening :
No
Mounting Type :
Surface Mount
Transistor Element Material :
SILICON
Power Dissipation-Max :
1.8W Ta 220W Tc
Gate to Source Voltage (Vgs) :
20V
Configuration :
SINGLE WITH BUILT-IN DIODE
Case Connection :
DRAIN
Rise Time :
67ns
Terminal Form :
Gull wing
Vgs (Max) :
±20V
Number of Terminations :
6
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
160A
HTS Code :
8541.29.00.95
ECCN Code :
EAR99
Terminal Finish :
MATTE TIN
RoHS Status :
ROHS3 Compliant
Drain-source On Resistance-Max :
0.002Ohm
JESD-30 Code :
R-PSSO-G6
Datasheets
NP160N04TUG-E1-AY
Introducing Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP160N04TUG-E1-AY from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:175°C TJ, Package / Case:TO-263-7, D2Pak (6 Leads + Tab), Mounting Type:Surface Mount, Number of Terminations:6, NP160N04TUG-E1-AY pinout, NP160N04TUG-E1-AY datasheet PDF, NP160N04TUG-E1-AY amp .Beyond Transistors - FETs, MOSFETs - Single Intersil (Renesas Electronics Corporation) NP160N04TUG-E1-AY ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Intersil (Renesas Electronics Corporation) NP160N04TUG-E1-AY


N-Channel Tape & Reel (TR) 2m Ω @ 80A, 10V ±20V 15750pF @ 25V 270nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)

NP160N04TUG-E1-AY Overview


As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 372 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 15750pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 94 ns, the device has taken time to charge its input capacitance before drain current conduction begins.There is a peak drain current of 640A, its maximum pulsed drain current.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 47 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.In order for DS breakdown voltage to remain above 40V, it should remain above the 40V level.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

NP160N04TUG-E1-AY Features


the avalanche energy rating (Eas) is 372 mJ
a continuous drain current (ID) of 160A
the turn-off delay time is 94 ns
based on its rated peak drain current 640A.
a 40V drain to source voltage (Vdss)


NP160N04TUG-E1-AY Applications


There are a lot of Renesas Electronics America
NP160N04TUG-E1-AY applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.
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