NP160N04TUJ-E1-AY

Manufacturer :

Intersil (Renesas Electronics Corporation)

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

160A

Mounting Type :

Surface Mount

Vgs (Max) :

±20V

Power Dissipation-Max :

1.8W Ta 250W Tc

Number of Terminations :

6

Rise Time :

20ns

Pulsed Drain Current-Max (IDM) :

640A

Case Connection :

DRAIN

Configuration :

SINGLE WITH BUILT-IN DIODE

Turn-Off Delay Time :

85 ns

Input Capacitance (Ciss) (Max) @ Vds :

10350pF @ 25V

Transistor Application :

SWITCHING

Radiation Hardening :

No

Drain-source On Resistance-Max :

0.002Ohm

Turn On Delay Time :

40 ns

Terminal Position :

Single

Current - Continuous Drain (Id) @ 25°C :

160A Tc

Gate to Source Voltage (Vgs) :

20V

DS Breakdown Voltage-Min :

40V

Vgs(th) (Max) @ Id :

4V @ 250µA

Terminal Form :

Gull wing

HTS Code :

8541.29.00.95

FET Type :

N-Channel

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Operating Temperature :

175°C TJ

Rds On (Max) @ Id, Vgs :

2m Ω @ 80A, 10V

Published :

2010

Number of Pins :

7

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Mode :

ENHANCEMENT MODE

Pin Count :

7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-263-7, D2Pak (6 Leads + Tab)

JESD-30 Code :

R-PSSO-G6

Packaging :

Tape and Reel (TR)

Number of Elements :

1

Transistor Element Material :

SILICON

Fall Time (Typ) :

15 ns

Gate Charge (Qg) (Max) @ Vgs :

180nC @ 10V

Drain to Source Voltage (Vdss) :

40V

Mount :

Surface Mount