NP160N04TUJ-E1-AY
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- Mfr.Part #
- NP160N04TUJ-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-7, D2Pak (6 Leads + Tab)
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 160A TO263-7
- Stock
- 20,334
- In Stock ：
- 20,334
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Surface Mount
- Operating Temperature :
- 175°C TJ
- Power Dissipation-Max :
- 1.8W Ta 250W Tc
- Current - Continuous Drain (Id) @ 25°C :
- 160A Tc
- Drain to Source Voltage (Vdss) :
- 40V
- Vgs (Max) :
- ±20V
- Gate to Source Voltage (Vgs) :
- 20V
- HTS Code :
- 8541.29.00.95
- Number of Pins :
- 7
- Operating Mode :
- ENHANCEMENT MODE
- Transistor Application :
- SWITCHING
- Turn-Off Delay Time :
- 85 ns
- Drain-source On Resistance-Max :
- 0.002Ohm
- Gate Charge (Qg) (Max) @ Vgs :
- 180nC @ 10V
- Turn On Delay Time :
- 40 ns
- RoHS Status :
- ROHS3 Compliant
- Terminal Form :
- Gull wing
- Rise Time :
- 20ns
- Number of Elements :
- 1
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- FET Type :
- N-Channel
- Radiation Hardening :
- No
- Number of Terminations :
- 6
- JESD-30 Code :
- R-PSSO-G6
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Case Connection :
- DRAIN
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 15 ns
- Pin Count :
- 7
- Input Capacitance (Ciss) (Max) @ Vds :
- 10350pF @ 25V
- Continuous Drain Current (ID) :
- 160A
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Pulsed Drain Current-Max (IDM) :
- 640A
- DS Breakdown Voltage-Min :
- 40V
- Rds On (Max) @ Id, Vgs :
- 2m Ω @ 80A, 10V
- Mounting Type :
- Surface Mount
- Published :
- 2010
- Package / Case :
- TO-263-7, D2Pak (6 Leads + Tab)
- Terminal Position :
- Single
- Datasheets
- NP160N04TUJ-E1-AY
N-Channel Tape & Reel (TR) 2m Ω @ 80A, 10V ±20V 10350pF @ 25V 180nC @ 10V 40V TO-263-7, D2Pak (6 Leads + Tab)
NP160N04TUJ-E1-AY Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 10350pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 160A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 85 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 640A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 40 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 40V in order to maintain normal operation.Operating this transistor requires a 40V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.
NP160N04TUJ-E1-AY Features
a continuous drain current (ID) of 160A
the turn-off delay time is 85 ns
based on its rated peak drain current 640A.
a 40V drain to source voltage (Vdss)
NP160N04TUJ-E1-AY Applications
There are a lot of Renesas Electronics America
NP160N04TUJ-E1-AY applications of single MOSFETs transistors.
- LCD/LED TV
- Consumer Appliances
- Lighting
- Uninterruptible Power Supply
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
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