NP110N055PUJ-E1B-AY

Manufacturer :

Renesas Electronics Corporation

Product Category :

Transistors - FETs, MOSFETs - Single

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain Current-Max (Abs) (ID) :

110A

Operating Mode :

ENHANCEMENT MODE

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

JEDEC-95 Code :

TO-263AB

RoHS Status :

ROHS3 Compliant

Number of Terminations :

2

Pulsed Drain Current-Max (IDM) :

440A

Avalanche Energy Rating (Eas) :

435 mJ

Transistor Application :

SWITCHING

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

Vendor Undefined

Power Dissipation-Max (Abs) :

288W

Case Connection :

DRAIN

Polarity/Channel Type :

N-Channel

Transistor Element Material :

SILICON

JESD-30 Code :

R-PSSO-G2

Qualification Status :

Not Qualified

Surface Mount :

yes

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

FET Technology :

METAL-OXIDE SEMICONDUCTOR

DS Breakdown Voltage-Min :

55V

Operating Temperature (Max) :

175°C

Drain-source On Resistance-Max :

0.0024Ohm

Pin Count :

3

Packaging :

Tape and Reel (TR)

Terminal Position :

Single

Number of Elements :

1

HTS Code :

8541.29.00.95