NP110N055PUG-E1-AY
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- Mfr.Part #
- NP110N055PUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 55V 110A TO263
- Stock
- 2,428
- In Stock ：
- 2,428
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Terminal Finish :
- MATTE TIN
- Transistor Element Material :
- SILICON
- Drain-source On Resistance-Max :
- 0.0028Ohm
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Power Dissipation-Max :
- 1.8W Ta 288W Tc
- Terminal Form :
- Gull wing
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Rds On (Max) @ Id, Vgs :
- 2.4m Ω @ 55A, 10V
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Rise Time :
- 201ns
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- RoHS Status :
- ROHS3 Compliant
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- DRAIN
- Lead Free :
- Lead Free
- Continuous Drain Current (ID) :
- 110A
- Turn-Off Delay Time :
- 131 ns
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 25700pF @ 25V
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- DS Breakdown Voltage-Min :
- 55V
- Number of Terminations :
- 2
- Vgs (Max) :
- ±20V
- Pulsed Drain Current-Max (IDM) :
- 440A
- Turn On Delay Time :
- 63 ns
- Published :
- 2004
- Fall Time (Typ) :
- 19 ns
- Terminal Position :
- Single
- Mounting Type :
- Surface Mount
- Mount :
- Surface Mount
- Gate to Source Voltage (Vgs) :
- 20V
- Drain to Source Voltage (Vdss) :
- 55V
- HTS Code :
- 8541.29.00.95
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- 175°C TJ
- JESD-609 Code :
- e3
- Datasheets
- NP110N055PUG-E1-AY
N-Channel Tape & Reel (TR) 2.4m Ω @ 55A, 10V ±20V 25700pF @ 25V 380nC @ 10V 55V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP110N055PUG-E1-AY Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 25700pF @ 25V.This device conducts a continuous drain current (ID) of 110A, which is the maximum continuous current transistor can conduct.When the device is turned off, a turn-off delay time of 131 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 440A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 63 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.A normal operation of the DS requires keeping the breakdown voltage above 55V.This transistor requires a drain-source voltage (Vdss) of 55V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
NP110N055PUG-E1-AY Features
a continuous drain current (ID) of 110A
the turn-off delay time is 131 ns
based on its rated peak drain current 440A.
a 55V drain to source voltage (Vdss)
NP110N055PUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP110N055PUG-E1-AY applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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