NP110N04PUG-E1-AY
- Mfr.Part #
- NP110N04PUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 110A TO263
- Stock
- 18,555
- In Stock :
- 18,555
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Number of Pins :
- 3
- Operating Temperature :
- 175°C TJ
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Packaging :
- Tape and Reel (TR)
- Factory Lead Time :
- 16 Weeks
- Gate to Source Voltage (Vgs) :
- 20V
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Configuration :
- Single
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Rds On (Max) @ Id, Vgs :
- 1.8m Ω @ 55A, 10V
- Pin Count :
- 3
- Fall Time (Typ) :
- 21 ns
- Mounting Type :
- Surface Mount
- Rise Time :
- 140ns
- Published :
- 2004
- Gate Charge (Qg) (Max) @ Vgs :
- 390nC @ 10V
- Turn-Off Delay Time :
- 130 ns
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Continuous Drain Current (ID) :
- 110A
- Power Dissipation-Max :
- 1.8W Ta 288W Tc
- Turn On Delay Time :
- 54 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Input Capacitance (Ciss) (Max) @ Vds :
- 25700pF @ 25V
- Drain to Source Voltage (Vdss) :
- 40V
- Datasheets
- NP110N04PUG-E1-AY

N-Channel Tape & Reel (TR) 1.8m Ω @ 55A, 10V ±20V 25700pF @ 25V 390nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP110N04PUG-E1-AY Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 25700pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.As a result of its turn-off delay time, which is 130 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 54 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 20VV.The transistor must receive a 40V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).
NP110N04PUG-E1-AY Features
a continuous drain current (ID) of 110A
the turn-off delay time is 130 ns
a 40V drain to source voltage (Vdss)
NP110N04PUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP110N04PUG-E1-AY applications of single MOSFETs transistors.
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
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