NP110N03PUG-E1-AY
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- Mfr.Part #
- NP110N03PUG-E1-AY
- Manufacturer
- Intersil (Renesas Electronics Corporation)
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 110A TO263
- Stock
- 19,543
- In Stock ：
- 19,543
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- Manufacturer :
- Intersil (Renesas Electronics Corporation)
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 24600pF @ 25V
- Factory Lead Time :
- 16 Weeks
- Fall Time (Typ) :
- 32 ns
- Continuous Drain Current (ID) :
- 110A
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Radiation Hardening :
- No
- Turn On Delay Time :
- 60 ns
- Number of Elements :
- 1
- Lead Free :
- Lead Free
- Power Dissipation :
- 1.8W
- Turn-Off Delay Time :
- 125 ns
- Operating Temperature :
- 175°C TJ
- Current - Continuous Drain (Id) @ 25°C :
- 110A Tc
- Drain to Source Voltage (Vdss) :
- 30V
- Gate Charge (Qg) (Max) @ Vgs :
- 380nC @ 10V
- Rds On (Max) @ Id, Vgs :
- 1.5m Ω @ 55A, 10V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- RoHS Status :
- ROHS3 Compliant
- Configuration :
- Single
- Gate to Source Voltage (Vgs) :
- 20V
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Pin Count :
- 3
- Mount :
- Surface Mount
- FET Type :
- N-Channel
- Rise Time :
- 150ns
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2004
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 1.8W Ta 288W Tc
- Mounting Type :
- Surface Mount
- Datasheets
- NP110N03PUG-E1-AY
N-Channel Tape & Reel (TR) 1.5m Ω @ 55A, 10V ±20V 24600pF @ 25V 380nC @ 10V 30V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
NP110N03PUG-E1-AY Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 24600pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 110A amps.It is [125 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 60 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.To operate this transistor, you will need a 30V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
NP110N03PUG-E1-AY Features
a continuous drain current (ID) of 110A
the turn-off delay time is 125 ns
a 30V drain to source voltage (Vdss)
NP110N03PUG-E1-AY Applications
There are a lot of Renesas Electronics America
NP110N03PUG-E1-AY applications of single MOSFETs transistors.
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
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