NGD8205NT4G

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Collector Emitter Breakdown Voltage :

390V

Max Power Dissipation :

125W

Polarity/Channel Type :

N-Channel

Collector Emitter Voltage (VCEO) :

390V

Number of Pins :

3

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Mounting Type :

Surface Mount

Lead Free :

Lead Free

Number of Terminations :

2

Max Collector Current :

20A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Td (on/off) @ 25°C :

-/5μs

Published :

2006

Pin Count :

3

Terminal Finish :

Tin (Sn)

Gate-Emitter Thr Voltage-Max :

2.1V

Factory Lead Time :

52 Weeks

Turn Off Time-Nom (toff) :

18500 ns

Radiation Hardening :

No

Gate-Emitter Voltage-Max :

15V

Transistor Element Material :

SILICON

Mount :

Surface Mount

Current - Collector Pulsed (Icm) :

50A

Max Breakdown Voltage :

390V

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

260

Voltage - Rated DC :

350V

RoHS Status :

RoHS Compliant

Turn On Time :

6500 ns

Power Dissipation :

125W

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

JESD-30 Code :

R-PSSO-G2

Current Rating :

20A

Case Connection :

COLLECTOR

Rise Time-Max :

8000ns

Terminal Form :

Gull wing

Base Part Number :

NGD8205N

ECCN Code :

EAR99

Pbfree Code :

yes

Test Condition :

300V, 9A, 1k Ω, 5V

Input Type :

Logic

JESD-609 Code :

e3

Fall Time-Max (tf) :

14000ns

Transistor Application :

AUTOMOTIVE IGNITION