NGD8205NT4
- Mfr.Part #
- NGD8205NT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 390V 20A 125W DPAK
- Stock
- 11,845
- In Stock :
- 11,845
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Transistor Application :
- AUTOMOTIVE IGNITION
- Turn On Time :
- 6500 ns
- Number of Elements :
- 1
- Packaging :
- Tape and Reel (TR)
- Current - Collector Pulsed (Icm) :
- 50A
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Published :
- 2009
- Input Type :
- Logic
- RoHS Status :
- Non-RoHS Compliant
- Polarity/Channel Type :
- N-Channel
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 4.5V, 20A
- Collector Emitter Voltage (VCEO) :
- 1.9V
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Pbfree Code :
- No
- Reach Compliance Code :
- not_compliant
- Turn Off Time-Nom (toff) :
- 18500 ns
- Gate-Emitter Thr Voltage-Max :
- 2.1V
- Voltage - Rated DC :
- 350V
- JESD-30 Code :
- R-PSSO-G2
- Case Connection :
- COLLECTOR
- Collector Emitter Breakdown Voltage :
- 390V
- Terminal Position :
- Single
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Max Collector Current :
- 20A
- JESD-609 Code :
- e0
- Peak Reflow Temperature (Cel) :
- 240
- Mount :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Power Dissipation :
- 125W
- ECCN Code :
- EAR99
- Gate-Emitter Voltage-Max :
- 15V
- Terminal Form :
- Gull wing
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Number of Terminations :
- 2
- Base Part Number :
- NGD8205N
- Qualification Status :
- Not Qualified
- Lead Free :
- Contains Lead
- Current Rating :
- 20A
- Rise Time-Max :
- 8000ns
- Mounting Type :
- Surface Mount
- Test Condition :
- 300V, 9A, 1k Ω, 5V
- Pin Count :
- 3
- Td (on/off) @ 25°C :
- -/5μs
- Max Power Dissipation :
- 125W
- Fall Time-Max (tf) :
- 14000ns
- Datasheets
- NGD8205NT4

NGD8205NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGD8205NT4 Description
The NGD8205NT4 is an Ignition IGBT with 20 Amp, 350 Volt, N?Channel DPAK. For usage in inductive coil driver applications, this Logic Level Insulated Gate Bipolar Transistor (IGBT) has monolithic circuitry combining ESD and Overvoltage clamping protection. Direct fuel injection, ignition, and other applications that need high voltage and high current switching are some of the most common usage.
NGD8205NT4 Features
-
Low Threshold Voltage for Interfacing Power Loads to Logic or
-
Microprocessor Devices
-
Low Saturation Voltage
-
High Pulsed Current Capability
-
Optional Gate Resistor (RG) and Gate?Emitter Resistor (RGE)
-
These are Pb?Free Devices
-
Ideal for Coil?on?Plug and Driver?on?Coil Applications
-
DPAK Package Offers Smaller Footprint for Increased Board Space
-
Gate?Emitter ESD Protection
-
Temperature Compensated Gate?Collector Voltage Clamp Limits Stress Applied to Load
-
Integrated ESD Diode Protection
NGD8205NT4 Applications
-
Ignition Systems
-
Direct Fuel Injection
-
High Voltage and High Current Switching
-
Solar Inverters
-
AC and DC Motor Drives
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