NGD8205NT4

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Number of Terminations :

2

Case Connection :

COLLECTOR

Peak Reflow Temperature (Cel) :

240

Polarity/Channel Type :

N-Channel

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Mounting Type :

Surface Mount

Published :

2009

Gate-Emitter Voltage-Max :

15V

Configuration :

SINGLE WITH BUILT-IN DIODE AND RESISTOR

Max Power Dissipation :

125W

Voltage - Rated DC :

350V

Reach Compliance Code :

not_compliant

Turn Off Time-Nom (toff) :

18500 ns

Power Dissipation :

125W

JESD-30 Code :

R-PSSO-G2

Gate-Emitter Thr Voltage-Max :

2.1V

Pin Count :

3

Current Rating :

20A

Max Collector Current :

20A

Turn On Time :

6500 ns

Number of Elements :

1

Collector Emitter Voltage (VCEO) :

1.9V

Input Type :

Logic

Pbfree Code :

No

Transistor Element Material :

SILICON

Number of Pins :

3

Lead Free :

Contains Lead

Terminal Position :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e0

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

RoHS Status :

Non-RoHS Compliant

Mount :

Surface Mount

Rise Time-Max :

8000ns

Current - Collector Pulsed (Icm) :

50A

Fall Time-Max (tf) :

14000ns

ECCN Code :

EAR99

Td (on/off) @ 25°C :

-/5μs

Base Part Number :

NGD8205N

Test Condition :

300V, 9A, 1k Ω, 5V

Collector Emitter Breakdown Voltage :

390V

Transistor Application :

AUTOMOTIVE IGNITION

Packaging :

Tape and Reel (TR)

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Finish :

Tin/Lead (Sn80Pb20)

Operating Temperature :

-55°C~175°C TJ

Terminal Form :

Gull wing

Qualification Status :

Not Qualified