NGD8201NT4
- Mfr.Part #
- NGD8201NT4
- Manufacturer
- onsemi
- Package / Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet
- Download
- Description
- IGBT 440V 20A 125W DPAK
- Stock
- 37,429
- In Stock :
- 37,429
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Terminal Position :
- Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- JESD-609 Code :
- e0
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 20A
- Current Rating :
- 20A
- Mount :
- Surface Mount
- Reach Compliance Code :
- not_compliant
- Collector Emitter Breakdown Voltage :
- 440V
- Voltage - Rated DC :
- 400V
- Base Part Number :
- NGD8201N
- Pin Count :
- 3
- Test Condition :
- 300V, 9A, 1k Ω, 5V
- Lead Free :
- Contains Lead
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 4.5V, 20A
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Collector Emitter Voltage (VCEO) :
- 1.9V
- Packaging :
- Tape and Reel (TR)
- Polarity/Channel Type :
- N-Channel
- Power Dissipation :
- 125W
- Mounting Type :
- Surface Mount
- Pbfree Code :
- No
- Case Connection :
- COLLECTOR
- Package / Case :
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Terminal Form :
- Gull wing
- Input Type :
- Logic
- Td (on/off) @ 25°C :
- -/5μs
- Current - Collector Pulsed (Icm) :
- 50A
- Rise Time-Max :
- 14000ns
- Number of Pins :
- 3
- Fall Time-Max (tf) :
- 7000ns
- Transistor Application :
- AUTOMOTIVE IGNITION
- Qualification Status :
- Not Qualified
- Turn On Time :
- 6500 ns
- RoHS Status :
- Non-RoHS Compliant
- Operating Temperature :
- -55°C~175°C TJ
- JESD-30 Code :
- R-PSSO-G2
- Max Power Dissipation :
- 125W
- Peak Reflow Temperature (Cel) :
- 240
- Turn Off Time-Nom (toff) :
- 18500 ns
- Number of Elements :
- 1
- Gate-Emitter Voltage-Max :
- 15V
- Terminal Finish :
- Tin/Lead (Sn80Pb20)
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Published :
- 2009
- Number of Terminations :
- 2
- Datasheets
- NGD8201NT4

NGD8201NT4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGD8201NT4 Description
NGD8201NT4 is a type of logic-level insulated gate bipolar transistor (IGBT) developed by ON Semiconductor. Its monolithic circuitry used in inductive coil driver applications is able to provide ESD and Overvoltage clamped protection. It is well suited for ignition, direct fuel injection, and applications requiring high voltage and high current switching.
NGD8201NT4 Features
Low saturation voltage
High pulsed current capability
Integrated ESD diode protection
Gate?emitter ESD protection
Package: DPAK
NGD8201NT4 Applications
Ignition systems
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