NGD8201NT4G

Manufacturer :

onsemi

Product Category :

Transistors - IGBTs - Single

Transistor Application :

POWER CONTROL

Mounting Type :

Surface Mount

Max Power Dissipation :

125W

Number of Pins :

3

JESD-30 Code :

R-PSSO-G2

Voltage - Rated DC :

400V

Gate-Emitter Thr Voltage-Max :

2.1V

Rise Time-Max :

8000ns

Terminal Finish :

Tin (Sn)

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

40

Mount :

Surface Mount

Case Connection :

COLLECTOR

Polarity/Channel Type :

N-Channel

ECCN Code :

EAR99

Pin Count :

3

Operating Temperature :

-55°C~175°C TJ

Pbfree Code :

yes

Lead Free :

Lead Free

Input Type :

Logic

Number of Elements :

1

Number of Terminations :

2

Packaging :

Tape and Reel (TR)

Collector Emitter Voltage (VCEO) :

440V

Turn On Time :

6500 ns

Current Rating :

20A

Test Condition :

300V, 9A, 1k Ω, 5V

Peak Reflow Temperature (Cel) :

260

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Published :

2005

Base Part Number :

NGD8201N

REACH SVHC :

No SVHC

Max Collector Current :

20A

Fall Time-Max (tf) :

14000ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vce(on) (Max) @ Vge, Ic :

1.9V @ 4.5V, 20A

Collector Emitter Breakdown Voltage :

440V

Turn Off Time-Nom (toff) :

18500 ns

Td (on/off) @ 25°C :

-/5μs

Element Configuration :

Single

Radiation Hardening :

No

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate-Emitter Voltage-Max :

15V

Max Breakdown Voltage :

440V

RoHS Status :

RoHS Compliant

Current - Collector Pulsed (Icm) :

50A

Power Dissipation :

125W