NGB8206NTF4
- Mfr.Part #
- NGB8206NTF4
- Manufacturer
- onsemi
- Package / Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet
- Download
- Description
- IGBT 390V 20A 150W D2PAK3
- Stock
- 1,952
- In Stock :
- 1,952
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - IGBTs - Single
- Max Collector Current :
- 20A
- Moisture Sensitivity Level (MSL) :
- 2 (1 Year)
- Qualification Status :
- Not Qualified
- Min Operating Temperature :
- -55°C
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- Single
- Current Rating :
- 20A
- Reach Compliance Code :
- not_compliant
- Test Condition :
- 300V, 9A, 1k Ω, 5V
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 240
- Collector Emitter Voltage (VCEO) :
- 1.9V
- Pin Count :
- 4
- Packaging :
- Tape and Reel (TR)
- Transistor Application :
- AUTOMOTIVE IGNITION
- Case Connection :
- COLLECTOR
- Current - Collector Pulsed (Icm) :
- 50A
- Voltage - Rated DC :
- 400V
- RoHS Status :
- Non-RoHS Compliant
- Configuration :
- SINGLE WITH BUILT-IN DIODE AND RESISTOR
- Collector Emitter Breakdown Voltage :
- 390V
- Input Type :
- Logic
- JESD-609 Code :
- e0
- Number of Pins :
- 3
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 4.5V, 20A
- Terminal Form :
- Gull wing
- JESD-30 Code :
- R-PSSO-G2
- Turn Off Time-Nom (toff) :
- 18500 ns
- Lead Free :
- Contains Lead
- Base Part Number :
- NGB8206
- Package / Case :
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Number of Terminations :
- 2
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 150W
- Max Operating Temperature :
- 175°C
- Td (on/off) @ 25°C :
- -/5μs
- Mount :
- Surface Mount
- ECCN Code :
- EAR99
- Turn On Time :
- 6500 ns
- Polarity/Channel Type :
- N-Channel
- Published :
- 2009
- Datasheets
- NGB8206NTF4

NGB8206NTF4 datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available at
NGB8206NTF4 Description
NGB8206NTF4 is a 350v N?Channel D2 PAK Ignition IGBT. This Logic Level Insulated Gate Bipolar Transistor (IGBT) NGB8206NTF4 features monolithic circuitry integrating ESD and Overvoltage clamped protection for use in inductive coil driver applications. Primary uses include Ignition, Direct Fuel Injection, or wherever high voltage and high current switching is required. The Operating and Storage Temperature Range is between -55 and 175℃. And the transistor NGB8206NTF4 is in the TO-263-3 package with 150W power dissipation.
NGB8206NTF4 Features
Ideal for Coil-on-Plug and Driver-on-Coil Applications
Gate-Emitter ESD Protection
Temperature Compensated Gate -Collector Voltage Clamp Limits Stress Applied to Load
Integrated ESD Diode Protection
Low Threshold Voltage for Interfacing Power Loads to Logic or Microprocessor Devices
Low Saturation Voltage
High Pulsed Current Capability
Optional Gate Resistor (RG) and Gate-Emitter Resistor (RGE)
Pb-Free Packages are Available
NGB8206NTF4 Applications
Ignition Systems
Automotive
Hybrid, electric & powertrain systems
Enterprise systems
Enterprise projectors
Personal electronics
Home theater & entertainment
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