NE58219-T1-A

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Mfr.Part #
NE58219-T1-A
Manufacturer
Renesas Electronics Corporation
Package / Case
SC-75, SOT-416
Datasheet
Download
Description
NPN SILICON AMPLIFIER AND OSCILL
Stock
36,000
In Stock :
36,000

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Manufacturer :
Renesas Electronics Corporation
Product Category :
Transistors - Bipolar (BJT) - RF
Continuous Collector Current :
60mA
Element Configuration :
Single
Frequency :
5GHz
Output Power :
100mW
Collector Base Voltage (VCBO) :
20V
Emitter Base Voltage (VEBO) :
3V
Base Part Number :
NE58219
Max Power Dissipation :
100mW
RoHS Status :
RoHS Compliant
Power Dissipation :
100mW
Transistor Type :
NPN
hFE Min :
120
Min Operating Temperature :
-55°C
Max Operating Temperature :
125°C
Package / Case :
SC-75, SOT-416
Mount :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Collector Emitter Breakdown Voltage :
12V
Packaging :
Cut Tape (CT)
Mounting Type :
Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce :
60 @ 5mA 5V
Max Breakdown Voltage :
12V
Collector Emitter Voltage (VCEO) :
12V
Number of Pins :
3
Max Collector Current :
60mA
Lead Free :
Lead Free
Radiation Hardening :
No
Number of Elements :
1
Datasheets
NE58219-T1-A
Introducing Transistors - Bipolar (BJT) - RF Renesas Electronics Corporation NE58219-T1-A from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:NE58219, Package / Case:SC-75, SOT-416, Mounting Type:Surface Mount, Number of Pins:3, NE58219-T1-A pinout, NE58219-T1-A datasheet PDF, NE58219-T1-A amp .Beyond Transistors - Bipolar (BJT) - RF Renesas Electronics Corporation NE58219-T1-A ,we also offer BFP196WH6327XTSA1, BFR193E6327HTSA1, BFR360FH6327XTSA1, Our vast inventory has you covered. Contact us now for immediate solutions.

Renesas Electronics Corporation NE58219-T1-A


NE58219-T1-A datasheet pdf and Transistors - Bipolar (BJT) - RF product details from CEL stock available at

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