NDP6060L

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Mount :

Through Hole

Number of Terminations :

3

Operating Temperature :

-65°C~175°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

2000pF @ 25V

Vgs(th) (Max) @ Id :

2V @ 250μA

Factory Lead Time :

9 Weeks

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

200 mJ

Resistance :

25mOhm

Published :

1998

Vgs (Max) :

±16V

Continuous Drain Current (ID) :

48A

Fall Time (Typ) :

161 ns

Power Dissipation-Max :

100W Tc

REACH SVHC :

No SVHC

Packaging :

Tube

Gate Charge (Qg) (Max) @ Vgs :

60nC @ 5V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Transistor Element Material :

SILICON

FET Type :

N-Channel

Gate to Source Voltage (Vgs) :

16V

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Drain to Source Breakdown Voltage :

60V

Length :

6.35mm

Pbfree Code :

yes

Height :

6.35mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

15 ns

Terminal Finish :

Tin (Sn)

RoHS Status :

ROHS3 Compliant

Weight :

1.8g

Rds On (Max) @ Id, Vgs :

20m Ω @ 24A, 10V

Threshold Voltage :

2V

Current Rating :

48A

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Package / Case :

TO-220-3

Rise Time :

320ns

Additional Feature :

LOGIC LEVEL COMPATIBLE

Lead Free :

Lead Free

Voltage - Rated DC :

60V

Number of Elements :

1

Turn-Off Delay Time :

49 ns

ECCN Code :

EAR99

Width :

6.35mm

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

100W

JESD-609 Code :

e3

Element Configuration :

Single

Radiation Hardening :

No

Number of Pins :

3

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING