NDP6060

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Published :

1998

Transistor Application :

SWITCHING

Power Dissipation-Max :

100W Tc

Weight :

1.8g

FET Type :

N-Channel

Current Rating :

48A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Number of Pins :

3

Rise Time :

145ns

Operating Temperature :

-65°C~175°C TJ

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

25m Ω @ 24A, 10V

Continuous Drain Current (ID) :

48A

Resistance :

25mOhm

Avalanche Energy Rating (Eas) :

200 mJ

Mount :

Through Hole

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

1800pF @ 25V

Mounting Type :

Through Hole

Fall Time (Typ) :

77 ns

Turn-Off Delay Time :

28 ns

Drive Voltage (Max Rds On,Min Rds On) :

10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn On Delay Time :

10 ns

Gate to Source Voltage (Vgs) :

20V

Pbfree Code :

yes

Vgs (Max) :

±20V

Radiation Hardening :

No

Voltage - Rated DC :

60V

Number of Terminations :

3

Element Configuration :

Single

Current - Continuous Drain (Id) @ 25°C :

48A Tc

Threshold Voltage :

2.9V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Number of Elements :

1

Gate Charge (Qg) (Max) @ Vgs :

70nC @ 10V

Power Dissipation :

100W

Terminal Finish :

Tin (Sn)

REACH SVHC :

No SVHC

Drain to Source Breakdown Voltage :

60V

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

9 Weeks

Packaging :

Tube

ECCN Code :

EAR99