NDP603AL

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

FET Type :

N-Channel

Configuration :

SINGLE WITH BUILT-IN DIODE

Vgs(th) (Max) @ Id :

3V @ 250µA

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Qualification Status :

COMMERCIAL

Rds On (Max) @ Id, Vgs :

22m Ω @ 25A, 10V

Drain Current-Max (Abs) (ID) :

25A

Terminal Position :

Single

Drain to Source Voltage (Vdss) :

30V

DS Breakdown Voltage-Min :

30V

Drain-source On Resistance-Max :

0.022Ohm

Transistor Application :

SWITCHING

Reach Compliance Code :

Unknown

Terminal Finish :

NOT SPECIFIED

Input Capacitance (Ciss) (Max) @ Vds :

1.1pF @ 15V

Current - Continuous Drain (Id) @ 25°C :

25A Tc

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

JESD-30 Code :

R-PSFM-T3

Mounting Type :

Through Hole

Avalanche Energy Rating (Eas) :

100 mJ

JEDEC-95 Code :

TO-220AB

Additional Feature :

LOGIC LEVEL COMPATIBLE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

50W Tc

Pin Count :

3

Pulsed Drain Current-Max (IDM) :

100A

Vgs (Max) :

±20V

RoHS Status :

Non-RoHS Compliant

Operating Temperature :

-65°C~175°C TJ

Packaging :

Tube

Number of Elements :

1

Surface Mount :

No

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

40nC @ 10V