NDP603AL

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Mfr.Part #
NDP603AL
Manufacturer
Fairchild Semiconductor
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 30V 25A TO220-3
Stock
1
In Stock :
1

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Manufacturer :
Fairchild Semiconductor
Product Category :
Transistors - FETs, MOSFETs - Single
DS Breakdown Voltage-Min :
30V
FET Type :
N-Channel
Operating Mode :
ENHANCEMENT MODE
Drive Voltage (Max Rds On,Min Rds On) :
4.5V 10V
Configuration :
SINGLE WITH BUILT-IN DIODE
Transistor Element Material :
SILICON
Drain to Source Voltage (Vdss) :
30V
Drain-source On Resistance-Max :
0.022Ohm
Packaging :
Tube
Terminal Finish :
NOT SPECIFIED
Power Dissipation-Max :
50W Tc
Qualification Status :
COMMERCIAL
JEDEC-95 Code :
TO-220AB
Operating Temperature :
-65°C~175°C TJ
JESD-30 Code :
R-PSFM-T3
Input Capacitance (Ciss) (Max) @ Vds :
1.1pF @ 15V
Rds On (Max) @ Id, Vgs :
22m Ω @ 25A, 10V
Drain Current-Max (Abs) (ID) :
25A
RoHS Status :
Non-RoHS Compliant
Transistor Application :
SWITCHING
Package / Case :
TO-220-3
Mounting Type :
Through Hole
Number of Elements :
1
Additional Feature :
LOGIC LEVEL COMPATIBLE
Number of Terminations :
3
Vgs (Max) :
±20V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current - Continuous Drain (Id) @ 25°C :
25A Tc
Gate Charge (Qg) (Max) @ Vgs :
40nC @ 10V
Pulsed Drain Current-Max (IDM) :
100A
Terminal Position :
Single
Surface Mount :
No
Vgs(th) (Max) @ Id :
3V @ 250µA
Pin Count :
3
Avalanche Energy Rating (Eas) :
100 mJ
Reach Compliance Code :
Unknown
Datasheets
NDP603AL
Introducing Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDP603AL from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~175°C TJ, Package / Case:TO-220-3, Mounting Type:Through Hole, Number of Terminations:3, NDP603AL pinout, NDP603AL datasheet PDF, NDP603AL amp .Beyond Transistors - FETs, MOSFETs - Single Fairchild Semiconductor NDP603AL ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

Fairchild Semiconductor NDP603AL


N-Channel Tube 22m Ω @ 25A, 10V ±20V 1.1pF @ 15V 40nC @ 10V 30V TO-220-3

NDP603AL Overview


The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 100 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.1pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 25A.Peak drain current is 100A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.

NDP603AL Features


the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)


NDP603AL Applications


There are a lot of Rochester Electronics, LLC
NDP603AL applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
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