NDP603AL
- Mfr.Part #
- NDP603AL
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 25A TO220-3
- Stock
- 1
- In Stock :
- 1
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- DS Breakdown Voltage-Min :
- 30V
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Drive Voltage (Max Rds On,Min Rds On) :
- 4.5V 10V
- Configuration :
- SINGLE WITH BUILT-IN DIODE
- Transistor Element Material :
- SILICON
- Drain to Source Voltage (Vdss) :
- 30V
- Drain-source On Resistance-Max :
- 0.022Ohm
- Packaging :
- Tube
- Terminal Finish :
- NOT SPECIFIED
- Power Dissipation-Max :
- 50W Tc
- Qualification Status :
- COMMERCIAL
- JEDEC-95 Code :
- TO-220AB
- Operating Temperature :
- -65°C~175°C TJ
- JESD-30 Code :
- R-PSFM-T3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1.1pF @ 15V
- Rds On (Max) @ Id, Vgs :
- 22m Ω @ 25A, 10V
- Drain Current-Max (Abs) (ID) :
- 25A
- RoHS Status :
- Non-RoHS Compliant
- Transistor Application :
- SWITCHING
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Additional Feature :
- LOGIC LEVEL COMPATIBLE
- Number of Terminations :
- 3
- Vgs (Max) :
- ±20V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Continuous Drain (Id) @ 25°C :
- 25A Tc
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Pulsed Drain Current-Max (IDM) :
- 100A
- Terminal Position :
- Single
- Surface Mount :
- No
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pin Count :
- 3
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Reach Compliance Code :
- Unknown
- Datasheets
- NDP603AL

N-Channel Tube 22m Ω @ 25A, 10V ±20V 1.1pF @ 15V 40nC @ 10V 30V TO-220-3
NDP603AL Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 100 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1.1pF @ 15V is its maximum input capacitance.Drain current refers to the maximum continuous current a device can conduct, and it is 25A.Peak drain current is 100A, which is the maximum pulsed drain current.Normal operation requires that the DS breakdown voltage remain above 30V.For this transistor to work, a voltage 30V is required between drain and source (Vdss).Using drive voltage (4.5V 10V), this device contributes to a reduction in overall power consumption.
NDP603AL Features
the avalanche energy rating (Eas) is 100 mJ
based on its rated peak drain current 100A.
a 30V drain to source voltage (Vdss)
NDP603AL Applications
There are a lot of Rochester Electronics, LLC
NDP603AL applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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