NDP6020P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Pbfree Code :

yes

Element Configuration :

Single

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

20V

FET Type :

P-Channel

Current Rating :

-24A

Factory Lead Time :

10 Weeks

Terminal Finish :

Tin (Sn)

Height :

16.3mm

Operating Temperature :

-65°C~175°C TJ

Rds On (Max) @ Id, Vgs :

50m Ω @ 12A, 4.5V

JESD-609 Code :

e3

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 10V

JEDEC-95 Code :

TO-220AB

Operating Mode :

ENHANCEMENT MODE

Additional Feature :

LOGIC LEVEL COMPATIBLE

Rise Time :

27ns

Turn On Delay Time :

15 ns

Packaging :

Tube

Length :

10.67mm

Gate to Source Voltage (Vgs) :

8V

Transistor Element Material :

SILICON

Weight :

1.8g

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Number of Pins :

3

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Power Dissipation-Max :

60W Tc

Package / Case :

TO-220-3

Vgs(th) (Max) @ Id :

1V @ 250μA

REACH SVHC :

No SVHC

Fall Time (Typ) :

70 ns

Lead Free :

Lead Free

Power Dissipation :

60W

Vgs (Max) :

±8V

Width :

4.7mm

Resistance :

50mOhm

Mounting Type :

Through Hole

Number of Terminations :

3

Continuous Drain Current (ID) :

-24A

Turn-Off Delay Time :

120 ns

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Threshold Voltage :

-700mV

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

-20V

Drain to Source Breakdown Voltage :

-20V

Published :

1998

Number of Elements :

1

Pulsed Drain Current-Max (IDM) :

70A