NDP6020P

Manufacturer :

onsemi

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Temperature :

-65°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Continuous Drain Current (ID) :

-24A

Factory Lead Time :

10 Weeks

Resistance :

50mOhm

Packaging :

Tube

Number of Pins :

3

Power Dissipation-Max :

60W Tc

Transistor Element Material :

SILICON

Rise Time :

27ns

Width :

4.7mm

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Length :

10.67mm

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

-20V

Input Capacitance (Ciss) (Max) @ Vds :

1590pF @ 10V

FET Type :

P-Channel

Turn On Delay Time :

15 ns

Pbfree Code :

yes

Power Dissipation :

60W

Mount :

Through Hole

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Application :

SWITCHING

Current Rating :

-24A

Radiation Hardening :

No

ECCN Code :

EAR99

Published :

1998

Number of Terminations :

3

Package / Case :

TO-220-3

Fall Time (Typ) :

70 ns

REACH SVHC :

No SVHC

Additional Feature :

LOGIC LEVEL COMPATIBLE

Threshold Voltage :

-700mV

Vgs (Max) :

±8V

Rds On (Max) @ Id, Vgs :

50m Ω @ 12A, 4.5V

Height :

16.3mm

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Tin (Sn)

Element Configuration :

Single

Voltage - Rated DC :

-20V

Pulsed Drain Current-Max (IDM) :

70A

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Current - Continuous Drain (Id) @ 25°C :

24A Tc

Mounting Type :

Through Hole

Drain to Source Voltage (Vdss) :

20V

Weight :

1.8g

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

8V

JEDEC-95 Code :

TO-220AB

Turn-Off Delay Time :

120 ns

Gate Charge (Qg) (Max) @ Vgs :

35nC @ 5V