MSD42WT1
- Mfr.Part #
- MSD42WT1
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.15A SC70-3
- Stock
- 39,360
- In Stock :
- 39,360
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Package / Case :
- SC-70, SOT-323
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 25
- Pin Count :
- 3
- Number of Pins :
- 3
- Number of Elements :
- 1
- Voltage - Rated DC :
- 300V
- Lead Free :
- Lead Free
- Polarity/Channel Type :
- NPN
- Power Dissipation :
- 450mW
- Terminal Position :
- Dual
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Operating Temperature :
- -55°C~150°C TJ
- Factory Lead Time :
- 8 Weeks
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- JESD-609 Code :
- e3
- ECCN Code :
- EAR99
- Terminal Form :
- Gull wing
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 300V
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 150mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Published :
- 2007
- Contact Plating :
- Tin
- Collector Emitter Voltage (VCEO) :
- 300V
- Mounting Type :
- Surface Mount
- Halogen Free :
- Halogen Free
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 150mA
- Max Power Dissipation :
- 150mW
- Number of Terminations :
- 3
- Packaging :
- Tape and Reel (TR)
- Transistor Type :
- NPN
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 300V
- Surface Mount :
- yes
- Base Part Number :
- MSD42
- Datasheets
- MSD42WT1

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSD42WT1G Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 300V volts can be used.A maximum collector current of 150mA volts is possible.
MSD42WT1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 150mA
MSD42WT1G Applications
There are a lot of ON Semiconductor
MSD42WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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