MSD42SWT1G
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- Mfr.Part #
- MSD42SWT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.15A SC70-3
- Stock
- 8,967
- In Stock ：
- 8,967
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 50MHz
- Mounting Type :
- Surface Mount
- Terminal Form :
- Gull wing
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Emitter Base Voltage (VEBO) :
- 6V
- Packaging :
- Tape and Reel (TR)
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 10 Weeks
- Max Power Dissipation :
- 150mW
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- Polarity/Channel Type :
- NPN
- Transistor Type :
- NPN
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Current Rating :
- 150mA
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Max Breakdown Voltage :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Terminations :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Position :
- Dual
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- RoHS Status :
- ROHS3 Compliant
- JESD-609 Code :
- e3
- Voltage - Rated DC :
- 300V
- Lead Free :
- Lead Free
- Max Collector Current :
- 150mA
- Pin Count :
- 3
- Surface Mount :
- yes
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- MSD42
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Application :
- AMPLIFIER
- Published :
- 2009
- Package / Case :
- SC-70, SOT-323
- Power Dissipation :
- 150mW
- Collector Base Voltage (VCBO) :
- 300V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 300V
- hFE Min :
- 25
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 200mA
- Terminal Finish :
- Tin (Sn)
- Datasheets
- MSD42SWT1G
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSD42SWT1G Overview
DC current gain in this device equals 25 @ 1mA 10V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 500mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 2mA, 200mA.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 50MHz.Breakdown input voltage is 300V volts.In extreme cases, the collector current can be as low as 150mA volts.
MSD42SWT1G Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 200mA
the emitter base voltage is kept at 6V
the current rating of this device is 150mA
a transition frequency of 50MHz
MSD42SWT1G Applications
There are a lot of ON Semiconductor
MSD42SWT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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