MSD42WT1G
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- Mfr.Part #
- MSD42WT1G
- Manufacturer
- onsemi
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.15A SC70-3
- Stock
- 26,418
- In Stock ：
- 26,418
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Max Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Surface Mount
- Max Power Dissipation :
- 150mW
- Package / Case :
- SC-70, SOT-323
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- hFE Min :
- 25
- Contact Plating :
- Tin
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Halogen Free :
- Halogen Free
- Current Rating :
- 150mA
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- NPN
- Voltage - Rated DC :
- 300V
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- Radiation Hardening :
- No
- Surface Mount :
- yes
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- MSD42
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 150mA
- Collector Base Voltage (VCBO) :
- 300V
- Power Dissipation :
- 450mW
- Emitter Base Voltage (VEBO) :
- 6V
- Peak Reflow Temperature (Cel) :
- 260
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Terminal Form :
- Gull wing
- Published :
- 2007
- Pbfree Code :
- yes
- Datasheets
- MSD42WT1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
MSD42WT1G Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 150mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.A breakdown input voltage of 300V volts can be used.A maximum collector current of 150mA volts is possible.
MSD42WT1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 150mA
MSD42WT1G Applications
There are a lot of ON Semiconductor
MSD42WT1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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