MSD42T1G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Published :

2009

Transistor Application :

AMPLIFIER

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Current - Collector Cutoff (Max) :

100nA ICBO

Terminal Form :

Gull wing

JESD-609 Code :

e3

Lead Free :

Lead Free

Vce Saturation (Max) @ Ib, Ic :

500mV @ 2mA, 20mA

Collector Base Voltage (VCBO) :

300V

Package / Case :

TO-236-3, SC-59, SOT-23-3

Base Part Number :

MSD42

Emitter Base Voltage (VEBO) :

6V

Number of Pins :

3

Operating Temperature :

-55°C~150°C TJ

Collector Emitter Breakdown Voltage :

300V

Element Configuration :

Single

Mounting Type :

Surface Mount

Terminal Finish :

Tin (Sn)

DC Current Gain (hFE) (Min) @ Ic, Vce :

40 @ 30mA 10V

Current Rating :

150mA

Surface Mount :

yes

Polarity/Channel Type :

NPN

Lifecycle Status :

ACTIVE (Last Updated: 3 days ago)

Max Power Dissipation :

150mW

Transistor Type :

NPN

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Voltage - Rated DC :

300V

Power Dissipation :

150mW

Pin Count :

3

Pbfree Code :

yes

Number of Elements :

1

hFE Min :

25

Max Collector Current :

150mA

Factory Lead Time :

2 Weeks

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

300V

Terminal Position :

Dual

Radiation Hardening :

No

Moisture Sensitivity Level (MSL) :

1 (Unlimited)