MPSA93RLRMG
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- Mfr.Part #
- MPSA93RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 200V 0.5A TO92
- Stock
- 11,941
- In Stock ：
- 11,941
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- HTS Code :
- 8541.21.00.95
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 400mV @ 2mA, 20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Current Rating :
- -500mA
- Base Part Number :
- MPSA93
- Number of Pins :
- 3
- Transistor Type :
- PNP
- Polarity/Channel Type :
- PNP
- Pin Count :
- 3
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C~150°C TJ
- JESD-609 Code :
- e1
- hFE Min :
- 25
- Packaging :
- Tape and Box (TB)
- Published :
- 2009
- Qualification Status :
- Not Qualified
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 200V
- Max Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Collector Emitter Voltage (VCEO) :
- 400mV
- Voltage - Rated DC :
- -200V
- Gain Bandwidth Product :
- 50MHz
- RoHS Status :
- RoHS Compliant
- Current - Collector (Ic) (Max) :
- 500mA
- Number of Elements :
- 1
- Max Collector Current :
- 500mA
- Collector Emitter Saturation Voltage :
- -500mV
- Lead Free :
- Lead Free
- Transition Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- -300V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Datasheets
- MPSA93RLRMG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA93RLRMG Overview
In this device, the DC current gain is 25 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of -500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 2mA, 20mA.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA93RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 400mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA93RLRMG Applications
There are a lot of ON Semiconductor
MPSA93RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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