MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- MPSA92 - MPSA92 - PNP BIPOLAR SM
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 300V
- Gain Bandwidth Product :
- 50MHz
- Max Collector Current :
- 500mA
- RoHS Status :
- RoHS Compliant
- Published :
- 2010
- Voltage - Rated DC :
- -300V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Pins :
- 3
- Max Power Dissipation :
- 625mW
- Transition Frequency :
- 50MHz
- Lead Free :
- Lead Free
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- PNP
- Current Rating :
- -500mA
- Weight :
- 4.535924g
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Surface Mount :
- No
- Transistor Type :
- PNP
- Width :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Peak Reflow Temperature (Cel) :
- 260
- Base Part Number :
- MPSA92
- Number of Terminations :
- 3
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- JESD-609 Code :
- e1
- Pin Count :
- 3
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- REACH SVHC :
- Unknown
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Element Material :
- SILICON
- Max Breakdown Voltage :
- 300V
- Frequency :
- 50MHz
- Power Dissipation :
- 625mW
- Collector Emitter Saturation Voltage :
- -500mV
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Radiation Hardening :
- No
- Height :
- 6.35mm
- Length :
- 6.35mm
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 300V
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- hFE Min :
- 25
- Datasheets
- MPSA92RLRMG
MPSA92RLRMG Documents
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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