MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity/Channel Type :
- PNP
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- hFE Min :
- 25
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- RoHS Status :
- RoHS Compliant
- Published :
- 2010
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Surface Mount :
- No
- Collector Base Voltage (VCBO) :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 300V
- Pin Count :
- 3
- Transistor Type :
- PNP
- Current Rating :
- -500mA
- Base Part Number :
- MPSA92
- Length :
- 6.35mm
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Gain Bandwidth Product :
- 50MHz
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Height :
- 6.35mm
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Packaging :
- Tape and Box (TB)
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Breakdown Voltage :
- 300V
- Frequency :
- 50MHz
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- Voltage - Rated DC :
- -300V
- Collector Emitter Saturation Voltage :
- -500mV
- REACH SVHC :
- Unknown
- Transistor Element Material :
- SILICON
- Max Power Dissipation :
- 625mW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Radiation Hardening :
- No
- Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 6.35mm
- Datasheets
- MPSA92RLRMG
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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