MPSA92RLRMG
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- Mfr.Part #
- MPSA92RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 26,000
- In Stock ：
- 26,000
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- -500mV
- Max Collector Current :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 300V
- Gain Bandwidth Product :
- 50MHz
- Frequency :
- 50MHz
- Operating Temperature :
- -55°C~150°C TJ
- Current Rating :
- -500mA
- Collector Base Voltage (VCBO) :
- 300V
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- REACH SVHC :
- Unknown
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Width :
- 6.35mm
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Power Dissipation :
- 625mW
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Base Part Number :
- MPSA92
- Polarity/Channel Type :
- PNP
- Weight :
- 4.535924g
- Voltage - Rated DC :
- -300V
- hFE Min :
- 25
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Transistor Type :
- PNP
- Published :
- 2010
- Terminal Position :
- BOTTOM
- Height :
- 6.35mm
- Surface Mount :
- No
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e1
- Max Breakdown Voltage :
- 300V
- Element Configuration :
- Single
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Box (TB)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Max Power Dissipation :
- 625mW
- Length :
- 6.35mm
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Datasheets
- MPSA92RLRMG
MPSA92RLRMG Documents
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA92RLRMG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 25 @ 30mA 10V.With a collector emitter saturation voltage of -500mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 2mA, 20mA.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 300V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA92RLRMG Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92RLRMG Applications
There are a lot of ON Semiconductor
MPSA92RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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