MPSA92G
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- Mfr.Part #
- MPSA92G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP 300V 0.5A TO92
- Stock
- 252
- In Stock ：
- 252
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transition Frequency :
- 50MHz
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 300V
- Lead Free :
- Lead Free
- hFE Min :
- 25
- Voltage - Rated DC :
- -300V
- ECCN Code :
- EAR99
- Max Collector Current :
- 500mA
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Gain Bandwidth Product :
- 50MHz
- Transistor Application :
- AMPLIFIER
- Transistor Element Material :
- SILICON
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Width :
- 4.19mm
- Frequency :
- 50MHz
- Transistor Type :
- PNP
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Weight :
- 4.535924g
- Collector Emitter Voltage (VCEO) :
- 300V
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Height :
- 5.33mm
- Collector Emitter Saturation Voltage :
- -500mV
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 30mA 10V
- Pin Count :
- 3
- Length :
- 5.2mm
- Power Dissipation :
- 625mW
- Published :
- 1998
- Current - Collector Cutoff (Max) :
- 250nA ICBO
- Collector Emitter Breakdown Voltage :
- 300V
- RoHS Status :
- RoHS Compliant
- Packaging :
- Bulk
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Current Rating :
- -500mA
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 4 days ago)
- Pbfree Code :
- yes
- REACH SVHC :
- No SVHC
- Base Part Number :
- MPSA92
- Peak Reflow Temperature (Cel) :
- 260
- Polarity/Channel Type :
- PNP
- Datasheets
- MPSA92G
MPSA92G Documents
,TO-226_straightlead.jpg)
PNP -55°C~150°C TJ 250nA ICBO 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA92G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 25 @ 30mA 10V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -500mV, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 50MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA92G Features
the DC current gain for this device is 25 @ 30mA 10V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 5V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA92G Applications
There are a lot of ON Semiconductor
MPSA92G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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