MPSA77G
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- Mfr.Part #
- MPSA77G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS PNP DARL 60V 0.5A TO92
- Stock
- 42,288
- In Stock ：
- 42,288
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Current Rating :
- -500mA
- RoHS Status :
- RoHS Compliant
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- hFE Min :
- 10000
- Pin Count :
- 3
- Max Power Dissipation :
- 625mW
- Collector Base Voltage (VCBO) :
- 60V
- Collector Emitter Voltage (VCEO) :
- 60V
- ECCN Code :
- EAR99
- Base Part Number :
- MPSA77
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500nA
- Mount :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 60V
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- -60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Transition Frequency :
- 125MHz
- Emitter Base Voltage (VEBO) :
- 10V
- Power Dissipation :
- 625mW
- Transistor Type :
- PNP - Darlington
- JESD-609 Code :
- e1
- Published :
- 2007
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Number of Terminations :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- Collector Emitter Saturation Voltage :
- 1.5V
- Packaging :
- Bulk
- Continuous Collector Current :
- -500mA
- Polarity :
- PNP
- Lifecycle Status :
- OBSOLETE (Last Updated: 19 hours ago)
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MPSA77G
,TO-226_straightlead.jpg)
PNP - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA77G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA77G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA77G Applications
There are a lot of ON Semiconductor
MPSA77G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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