MPSA64RLRMG
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- Mfr.Part #
- MPSA64RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92
- Stock
- 3,561
- In Stock ：
- 3,561
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 500mA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Collector Base Voltage (VCBO) :
- 30V
- Packaging :
- Tape and Box (TB)
- Collector Emitter Saturation Voltage :
- 1.5V
- Polarity :
- PNP
- RoHS Status :
- RoHS Compliant
- Base Part Number :
- MPSA64
- Collector Emitter Breakdown Voltage :
- 30V
- Max Power Dissipation :
- 625mW
- Published :
- 2007
- Voltage - Rated DC :
- -30V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Reach Compliance Code :
- Unknown
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 10V
- Power Dissipation :
- 625mW
- Qualification Status :
- Not Qualified
- Pin Count :
- 3
- Mount :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Transition Frequency :
- 125MHz
- Transistor Application :
- SWITCHING
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -55°C~150°C TJ
- Transistor Element Material :
- SILICON
- Continuous Collector Current :
- -500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Lifecycle Status :
- OBSOLETE (Last Updated: 19 hours ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- JESD-609 Code :
- e1
- Collector Emitter Voltage (VCEO) :
- 30V
- Frequency - Transition :
- 125MHz
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Current Rating :
- -500mA
- Datasheets
- MPSA64RLRMG
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA64RLRMG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA64RLRMG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA64RLRMG Applications
There are a lot of ON Semiconductor
MPSA64RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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