MPSA64RLRM
- Mfr.Part #
- MPSA64RLRM
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92
- Stock
- 48,139
- In Stock :
- 48,139
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Mount :
- Through Hole
- Current Rating :
- -500mA
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 30V
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 30V
- Transistor Type :
- PNP - Darlington
- Transition Frequency :
- 125MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Packaging :
- Tape and Box (TB)
- Reach Compliance Code :
- not_compliant
- Max Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 240
- Continuous Collector Current :
- -500mA
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- -30V
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Operating Temperature :
- -55°C~150°C TJ
- Element Configuration :
- Single
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Terminal Position :
- BOTTOM
- Base Part Number :
- MPSA64
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 500mA
- Polarity :
- PNP
- Lead Free :
- Contains Lead
- ECCN Code :
- EAR99
- Published :
- 2009
- Frequency - Transition :
- 125MHz
- Number of Terminations :
- 3
- Number of Elements :
- 1
- Qualification Status :
- Not Qualified
- Number of Pins :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 10V
- JESD-609 Code :
- e0
- Collector Emitter Saturation Voltage :
- 1.5V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Power Dissipation :
- 625mW
- Datasheets
- MPSA64RLRM
MPSA64RLRM Documents

PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA64RLRM Overview
This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 125MHz.The maximum collector current is 500mA volts.
MPSA64RLRM Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA64RLRM Applications
There are a lot of ON Semiconductor
MPSA64RLRM applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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