MPSA64RLRM

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Mfr.Part #
MPSA64RLRM
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
48,139
In Stock :
48,139

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Pin Count :
3
Mount :
Through Hole
Current Rating :
-500mA
Mounting Type :
Through Hole
Collector Emitter Voltage (VCEO) :
30V
RoHS Status :
Non-RoHS Compliant
Collector Emitter Breakdown Voltage :
30V
Transistor Type :
PNP - Darlington
Transition Frequency :
125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Packaging :
Tape and Box (TB)
Reach Compliance Code :
not_compliant
Max Power Dissipation :
625mW
Peak Reflow Temperature (Cel) :
240
Continuous Collector Current :
-500mA
Transistor Application :
AMPLIFIER
Voltage - Rated DC :
-30V
Terminal Finish :
Tin/Lead (Sn/Pb)
Operating Temperature :
-55°C~150°C TJ
Element Configuration :
Single
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Terminal Position :
BOTTOM
Base Part Number :
MPSA64
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Time@Peak Reflow Temperature-Max (s) :
30
Transistor Element Material :
SILICON
Max Collector Current :
500mA
Polarity :
PNP
Lead Free :
Contains Lead
ECCN Code :
EAR99
Published :
2009
Frequency - Transition :
125MHz
Number of Terminations :
3
Number of Elements :
1
Qualification Status :
Not Qualified
Number of Pins :
3
Collector Base Voltage (VCBO) :
30V
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
10V
JESD-609 Code :
e0
Collector Emitter Saturation Voltage :
1.5V
Current - Collector Cutoff (Max) :
100nA ICBO
Power Dissipation :
625mW
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA64RLRM from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Operating Temperature:-55°C~150°C TJ, Base Part Number:MPSA64, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), Number of Terminations:3, Number of Pins:3, MPSA64RLRM pinout, MPSA64RLRM datasheet PDF, MPSA64RLRM amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA64RLRM ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA64RLRM


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole

MPSA64RLRM Overview


This device has a DC current gain of 20000 @ 100mA 5V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of -500mA is necessary for high efficiency.The base voltage of the emitter can be kept at 10V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 125MHz.The maximum collector current is 500mA volts.

MPSA64RLRM Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MPSA64RLRM Applications


There are a lot of ON Semiconductor
MPSA64RLRM applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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