MPSA64RLRAG
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- Mfr.Part #
- MPSA64RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP DARL 30V 0.5A TO92
- Stock
- 37,530
- In Stock ：
- 37,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Transistor Type :
- PNP - Darlington
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Frequency - Transition :
- 125MHz
- Base Part Number :
- MPSA64
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Transition Frequency :
- 125MHz
- Lead Free :
- Lead Free
- Operating Temperature :
- -55°C~150°C TJ
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Collector Base Voltage (VCBO) :
- 30V
- JESD-609 Code :
- e1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 20000 @ 100mA 5V
- Qualification Status :
- Not Qualified
- Reach Compliance Code :
- Unknown
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Voltage - Rated DC :
- -30V
- Published :
- 2005
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Polarity :
- PNP
- Emitter Base Voltage (VEBO) :
- 10V
- Mounting Type :
- Through Hole
- Continuous Collector Current :
- -500mA
- Collector Emitter Voltage (VCEO) :
- 30V
- Max Collector Current :
- 500mA
- Current Rating :
- -500mA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Transistor Application :
- SWITCHING
- Transistor Element Material :
- SILICON
- Collector Emitter Saturation Voltage :
- 1.5V
- Datasheets
- MPSA64RLRAG
PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA64RLRAG Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 20000 @ 100mA 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.5V @ 100μA, 100mA.Continuous collector voltages of -500mA should be maintained to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.Its current rating is -500mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.Parts of this part have transition frequencies of 125MHz.During maximum operation, collector current can be as low as 500mA volts.
MPSA64RLRAG Features
the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA64RLRAG Applications
There are a lot of ON Semiconductor
MPSA64RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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