MPSA64G

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Mfr.Part #
MPSA64G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
7,984
In Stock :
7,984

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Element Material :
SILICON
Collector Base Voltage (VCBO) :
30V
JESD-609 Code :
e1
Collector Emitter Breakdown Voltage :
30V
Element Configuration :
Single
Lead Free :
Lead Free
Current - Collector Cutoff (Max) :
100nA ICBO
Current Rating :
-500mA
RoHS Status :
RoHS Compliant
Peak Reflow Temperature (Cel) :
260
Base Part Number :
MPSA64
Number of Elements :
1
Time@Peak Reflow Temperature-Max (s) :
40
Emitter Base Voltage (VEBO) :
10V
Continuous Collector Current :
-500mA
Number of Pins :
3
REACH SVHC :
No SVHC
Pin Count :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Qualification Status :
Not Qualified
Mounting Type :
Through Hole
Transistor Application :
SWITCHING
Collector Emitter Saturation Voltage :
1.5V
Pbfree Code :
yes
Transistor Type :
PNP - Darlington
Transition Frequency :
125MHz
Voltage - Rated DC :
-30V
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Lifecycle Status :
OBSOLETE (Last Updated: 4 days ago)
Power Dissipation :
625mW
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Max Collector Current :
500mA
Polarity :
PNP
Terminal Position :
BOTTOM
Collector Emitter Voltage (VCEO) :
30V
Mount :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Published :
2005
Packaging :
Bulk
Number of Terminations :
3
ECCN Code :
EAR99
Max Power Dissipation :
625mW
Operating Temperature :
-55°C~150°C TJ
Frequency - Transition :
125MHz
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA64G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:MPSA64, Number of Pins:3, Mounting Type:Through Hole, Package / Case:TO-226-3, TO-92-3 (TO-226AA), Number of Terminations:3, Operating Temperature:-55°C~150°C TJ, MPSA64G pinout, MPSA64G datasheet PDF, MPSA64G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA64G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA64G


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPSA64G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 125MHz.A maximum collector current of 500mA volts can be achieved.

MPSA64G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MPSA64G Applications


There are a lot of ON Semiconductor
MPSA64G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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