MPSA64G

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Mfr.Part #
MPSA64G
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Datasheet
Download
Description
TRANS PNP DARL 30V 0.5A TO92
Stock
7,984
In Stock :
7,984

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Package / Case :
TO-226-3, TO-92-3 (TO-226AA)
Collector Emitter Voltage (VCEO) :
30V
Current - Collector Cutoff (Max) :
100nA ICBO
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Emitter Base Voltage (VEBO) :
10V
Base Part Number :
MPSA64
Published :
2005
Element Configuration :
Single
REACH SVHC :
No SVHC
Mount :
Through Hole
ECCN Code :
EAR99
Collector Base Voltage (VCBO) :
30V
Transistor Type :
PNP - Darlington
Voltage - Rated DC :
-30V
Number of Elements :
1
Operating Temperature :
-55°C~150°C TJ
Collector Emitter Saturation Voltage :
1.5V
JESD-609 Code :
e1
Transistor Application :
SWITCHING
Power Dissipation :
625mW
Transistor Element Material :
SILICON
Peak Reflow Temperature (Cel) :
260
Frequency - Transition :
125MHz
Max Power Dissipation :
625mW
Polarity :
PNP
Number of Terminations :
3
RoHS Status :
RoHS Compliant
Collector Emitter Breakdown Voltage :
30V
Transition Frequency :
125MHz
Time@Peak Reflow Temperature-Max (s) :
40
Current Rating :
-500mA
Pin Count :
3
Mounting Type :
Through Hole
Vce Saturation (Max) @ Ib, Ic :
1.5V @ 100µA, 100mA
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Packaging :
Bulk
Pbfree Code :
yes
Max Collector Current :
500mA
Number of Pins :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
20000 @ 100mA 5V
Continuous Collector Current :
-500mA
Lead Free :
Lead Free
Terminal Position :
BOTTOM
Qualification Status :
Not Qualified
Lifecycle Status :
OBSOLETE (Last Updated: 4 days ago)
Datasheets
MPSA64G
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA64G from Chip IC,where excellence meets affordability. This product stands out with its Package / Case:TO-226-3, TO-92-3 (TO-226AA), Base Part Number:MPSA64, Operating Temperature:-55°C~150°C TJ, Number of Terminations:3, Mounting Type:Through Hole, Number of Pins:3, MPSA64G pinout, MPSA64G datasheet PDF, MPSA64G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA64G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA64G


PNP - Darlington -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole

MPSA64G Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 20000 @ 100mA 5V.The collector emitter saturation voltage is 1.5V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at -500mA for high efficiency.Emitter base voltages of 10V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 125MHz.A maximum collector current of 500mA volts can be achieved.

MPSA64G Features


the DC current gain for this device is 20000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz


MPSA64G Applications


There are a lot of ON Semiconductor
MPSA64G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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