MPSA56RLRMG
- Mfr.Part #
- MPSA56RLRMG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A TO92
- Stock
- 21,094
- In Stock :
- 21,094
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- -500mA
- Collector Emitter Breakdown Voltage :
- 80V
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 4V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 3 days ago)
- Pbfree Code :
- yes
- Number of Terminations :
- 3
- Transistor Application :
- AMPLIFIER
- Published :
- 2007
- Max Power Dissipation :
- 625mW
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Gain Bandwidth Product :
- 50MHz
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 250mV
- Collector Emitter Voltage (VCEO) :
- 80V
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Max Breakdown Voltage :
- 80V
- Frequency :
- 50MHz
- Packaging :
- Tape and Box (TB)
- Transition Frequency :
- 50MHz
- Transistor Type :
- PNP
- Power Dissipation :
- 625mW
- Number of Elements :
- 1
- Height :
- 6.35mm
- Base Part Number :
- MPSA56
- JESD-609 Code :
- e1
- Voltage - Rated DC :
- -80V
- Number of Pins :
- 3
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 6.35mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Collector Current :
- 500mA
- Collector Base Voltage (VCBO) :
- 80V
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- hFE Min :
- 100
- ECCN Code :
- EAR99
- REACH SVHC :
- Unknown
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Width :
- 25.4mm
- Datasheets
- MPSA56RLRMG

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA56RLRMG Overview
This device has a DC current gain of 100 @ 100mA 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 250mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).The base voltage of the emitter can be kept at 4V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -500mA.In this part, there is a transition frequency of 50MHz.As a result, it can handle voltages as low as 80V volts.The maximum collector current is 500mA volts.
MPSA56RLRMG Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA56RLRMG Applications
There are a lot of ON Semiconductor
MPSA56RLRMG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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