MPSA56RLRAG
- Mfr.Part #
- MPSA56RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 80V 0.5A TO92
- Stock
- 10,587
- In Stock :
- 10,587
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Terminal Position :
- BOTTOM
- Collector Emitter Saturation Voltage :
- 250mV
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 4V
- Height :
- 5.33mm
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 50MHz
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Radiation Hardening :
- No
- Width :
- 4.19mm
- Transition Frequency :
- 50MHz
- Base Part Number :
- MPSA56
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 5.2mm
- Transistor Type :
- PNP
- Max Breakdown Voltage :
- 80V
- Collector Emitter Breakdown Voltage :
- 80V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- Surface Mount :
- No
- Voltage - Rated DC :
- -80V
- Max Collector Current :
- 500mA
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 100nA
- Frequency :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- PNP
- Power Dissipation :
- 625mW
- hFE Min :
- 100
- ECCN Code :
- EAR99
- Current Rating :
- -500mA
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Published :
- 2004
- Packaging :
- Tape and Reel (TR)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Application :
- AMPLIFIER
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Weight :
- 4.535924g
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Datasheets
- MPSA56RLRAG

PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA56RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MPSA56RLRAG Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA56RLRAG Applications
There are a lot of ON Semiconductor
MPSA56RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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