MPSA56RLRAG

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Mfr.Part #
MPSA56RLRAG
Manufacturer
onsemi
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Datasheet
Download
Description
TRANS PNP 80V 0.5A TO92
Stock
10,587
In Stock :
10,587

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Operating Temperature :
-55°C~150°C TJ
Gain Bandwidth Product :
50MHz
Weight :
4.535924g
Pbfree Code :
yes
Base Part Number :
MPSA56
Max Power Dissipation :
625mW
Height :
5.33mm
Time@Peak Reflow Temperature-Max (s) :
40
Transistor Application :
AMPLIFIER
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Number of Elements :
1
Number of Pins :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
ECCN Code :
EAR99
Current - Collector Cutoff (Max) :
100nA
Published :
2004
Collector Emitter Saturation Voltage :
250mV
Collector Emitter Breakdown Voltage :
80V
Radiation Hardening :
No
Element Configuration :
Single
Pin Count :
3
Collector Emitter Voltage (VCEO) :
80V
Terminal Finish :
Tin/Silver/Copper (Sn/Ag/Cu)
Max Breakdown Voltage :
80V
Lead Free :
Lead Free
Packaging :
Tape and Reel (TR)
Terminal Position :
BOTTOM
Mounting Type :
Through Hole
Number of Terminations :
3
DC Current Gain (hFE) (Min) @ Ic, Vce :
100 @ 100mA 1V
Width :
4.19mm
Peak Reflow Temperature (Cel) :
260
Lifecycle Status :
LAST SHIPMENTS (Last Updated: 2 days ago)
Polarity/Channel Type :
PNP
Voltage - Rated DC :
-80V
Power Dissipation :
625mW
Vce Saturation (Max) @ Ib, Ic :
250mV @ 10mA, 100mA
Transition Frequency :
50MHz
Transistor Type :
PNP
hFE Min :
100
Collector Base Voltage (VCBO) :
80V
Package / Case :
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Emitter Base Voltage (VEBO) :
4V
Current Rating :
-500mA
JESD-609 Code :
e1
Frequency :
50MHz
Max Collector Current :
500mA
RoHS Status :
RoHS Compliant
Length :
5.2mm
Introducing Transistors - Bipolar (BJT) - Single onsemi MPSA56RLRAG from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-55°C~150°C TJ, Base Part Number:MPSA56, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Package / Case:TO-226-3, TO-92-3 (TO-226AA) (Formed Leads), MPSA56RLRAG pinout, MPSA56RLRAG datasheet PDF, MPSA56RLRAG amp .Beyond Transistors - Bipolar (BJT) - Single onsemi MPSA56RLRAG ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi MPSA56RLRAG


PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole

MPSA56RLRAG Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.The collector emitter saturation voltage is 250mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 4V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of -500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 80V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.

MPSA56RLRAG Features


the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz


MPSA56RLRAG Applications


There are a lot of ON Semiconductor
MPSA56RLRAG applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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