MPSA56RLRAG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Transistor Type :

PNP

Terminal Position :

BOTTOM

Collector Emitter Saturation Voltage :

250mV

Gain Bandwidth Product :

50MHz

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Transistor Application :

AMPLIFIER

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

REACH SVHC :

No SVHC

Base Part Number :

MPSA56

Width :

4.19mm

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 2 days ago)

Transistor Element Material :

SILICON

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

625mW

Voltage - Rated DC :

-80V

Max Collector Current :

500mA

ECCN Code :

EAR99

Collector Emitter Breakdown Voltage :

80V

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Emitter Base Voltage (VEBO) :

4V

hFE Min :

100

Radiation Hardening :

No

Pin Count :

3

Length :

5.2mm

Frequency :

50MHz

Height :

5.33mm

JESD-609 Code :

e1

Number of Terminations :

3

Lead Free :

Lead Free

Pbfree Code :

yes

Polarity/Channel Type :

PNP

Collector Base Voltage (VCBO) :

80V

Transition Frequency :

50MHz

RoHS Status :

RoHS Compliant

Surface Mount :

No

Packaging :

Tape and Reel (TR)

Published :

2004

Power Dissipation :

625mW

Mounting Type :

Through Hole

Number of Pins :

3

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

100nA

Max Breakdown Voltage :

80V

Element Configuration :

Single

Current Rating :

-500mA

Collector Emitter Voltage (VCEO) :

80V

Weight :

4.535924g

Number of Elements :

1