MPSA56G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Number of Elements :

1

hFE Min :

100

RoHS Status :

RoHS Compliant

Gain Bandwidth Product :

50MHz

Collector Emitter Saturation Voltage :

250mV

Width :

4.19mm

Transistor Element Material :

SILICON

Voltage - Rated DC :

-80V

Pin Count :

3

Frequency :

50MHz

Time@Peak Reflow Temperature-Max (s) :

40

Polarity/Channel Type :

PNP

Lead Free :

Lead Free

Transition Frequency :

50MHz

Max Power Dissipation :

625mW

DC Current Gain (hFE) (Min) @ Ic, Vce :

100 @ 100mA 1V

Published :

2007

Packaging :

Bulk

Number of Pins :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 day ago)

Max Collector Current :

500mA

Transistor Application :

AMPLIFIER

Element Configuration :

Single

Current - Collector Cutoff (Max) :

100nA

Weight :

4.535924g

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Operating Temperature :

-55°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Length :

5.2mm

Mounting Type :

Through Hole

Number of Terminations :

3

Current Rating :

-500mA

ECCN Code :

EAR99

Base Part Number :

MPSA56

Terminal Position :

BOTTOM

Mount :

Through Hole

Vce Saturation (Max) @ Ib, Ic :

250mV @ 10mA, 100mA

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Collector Emitter Breakdown Voltage :

80V

Emitter Base Voltage (VEBO) :

4V

Collector Emitter Voltage (VCEO) :

80V

JESD-609 Code :

e1

Height :

5.33mm

Pbfree Code :

yes

Transistor Type :

PNP

Power Dissipation :

625mW

Collector Base Voltage (VCBO) :

80V