MPSA55RLRAG
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- Mfr.Part #
- MPSA55RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS PNP 60V 0.5A TO92
- Stock
- 2,330
- In Stock ：
- 2,330
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 13 hours ago)
- Polarity/Channel Type :
- PNP
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 100mA 1V
- Element Configuration :
- Single
- Current Rating :
- -500mA
- Pbfree Code :
- yes
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Saturation Voltage :
- 250mV
- Mount :
- Through Hole
- Length :
- 6.35mm
- Width :
- 6.35mm
- RoHS Status :
- RoHS Compliant
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 4V
- Lead Free :
- Lead Free
- Frequency :
- 50MHz
- JESD-609 Code :
- e1
- Power Dissipation :
- 625mW
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 10mA, 100mA
- Height :
- 6.35mm
- Pin Count :
- 3
- Packaging :
- Cut Tape (CT)
- Collector Emitter Breakdown Voltage :
- 60V
- Number of Elements :
- 1
- Published :
- 2007
- Transition Frequency :
- 50MHz
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- PNP
- Base Part Number :
- MPSA55
- Number of Pins :
- 3
- hFE Min :
- 100
- Collector Base Voltage (VCBO) :
- 60V
- Voltage - Rated DC :
- -60V
- Current - Collector Cutoff (Max) :
- 100nA
- Max Collector Current :
- 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 625mW
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Emitter Voltage (VCEO) :
- 60V
- Mounting Type :
- Through Hole
- Transistor Element Material :
- SILICON
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- BOTTOM
- Transistor Application :
- AMPLIFIER
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- MPSA55RLRAG
PNP -55°C~150°C TJ 100nA 1 Elements 3 Terminations SILICON PNP TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Cut Tape (CT) Through Hole
MPSA55RLRAG Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 100 @ 100mA 1V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 10mA, 100mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -500mA.A transition frequency of 50MHz is present in the part.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 500mA volts at its maximum.
MPSA55RLRAG Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is -500mA
a transition frequency of 50MHz
MPSA55RLRAG Applications
There are a lot of ON Semiconductor
MPSA55RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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