MPSA43G
- Mfr.Part #
- MPSA43G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 200V 0.5A TO92
- Stock
- 25,270
- In Stock :
- 25,270
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Frequency :
- 50MHz
- Emitter Base Voltage (VEBO) :
- 6V
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging :
- Bulk
- Base Part Number :
- MPSA43
- Pbfree Code :
- yes
- Mounting Type :
- Through Hole
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Published :
- 2005
- Lifecycle Status :
- OBSOLETE (Last Updated: 3 days ago)
- RoHS Status :
- RoHS Compliant
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Terminal Position :
- BOTTOM
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Mount :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 200V
- Power Dissipation :
- 625mW
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Gain Bandwidth Product :
- 50MHz
- hFE Min :
- 25
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Current Rating :
- 500mA
- Collector Emitter Saturation Voltage :
- 500mV
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 200V
- Pin Count :
- 3
- Transition Frequency :
- 50MHz
- Collector Base Voltage (VCBO) :
- 200V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 200V
- Qualification Status :
- Not Qualified
- Datasheets
- MPSA43G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA43G Overview
In this device, the DC current gain is 25 @ 1mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA43G Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA43G Applications
There are a lot of ON Semiconductor
MPSA43G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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