MPSA42ZL1G
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- Mfr.Part #
- MPSA42ZL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 45,173
- In Stock ：
- 45,173
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Breakdown Voltage :
- 300V
- Emitter Base Voltage (VEBO) :
- 6V
- Element Configuration :
- Single
- Base Part Number :
- MPSA42
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 20 hours ago)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Current Rating :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Position :
- BOTTOM
- Voltage - Rated DC :
- 300V
- Pin Count :
- 3
- Published :
- 2009
- JESD-609 Code :
- e1
- Collector Base Voltage (VCBO) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Power Dissipation :
- 625mW
- ECCN Code :
- EAR99
- Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Gain Bandwidth Product :
- 50MHz
- Number of Terminations :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Max Collector Current :
- 500mA
- Surface Mount :
- No
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 500mV
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 300V
- Number of Elements :
- 1
- Pbfree Code :
- yes
- Collector Emitter Breakdown Voltage :
- 300V
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- hFE Min :
- 25
- Frequency :
- 50MHz
- Transition Frequency :
- 50MHz
- Packaging :
- Tape and Box (TB)
- Datasheets
- MPSA42ZL1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42ZL1G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.The breakdown input voltage is 300V volts.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSA42ZL1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42ZL1G Applications
There are a lot of ON Semiconductor
MPSA42ZL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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