MPSA42RLRPG
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- Mfr.Part #
- MPSA42RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 18,138
- In Stock ：
- 18,138
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Number of Elements :
- 1
- Max Breakdown Voltage :
- 300V
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 300V
- Packaging :
- Tape and Box (TB)
- JESD-609 Code :
- e1
- Gain Bandwidth Product :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Height :
- 6.35mm
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Emitter Breakdown Voltage :
- 300V
- ECCN Code :
- EAR99
- Weight :
- 4.535924g
- Surface Mount :
- No
- Width :
- 6.35mm
- Transition Frequency :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Current Rating :
- 500mA
- Base Part Number :
- MPSA42
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- RoHS Status :
- RoHS Compliant
- Published :
- 1998
- hFE Min :
- 25
- Emitter Base Voltage (VEBO) :
- 6V
- Polarity/Channel Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Operating Temperature :
- -55°C~150°C TJ
- Frequency :
- 50MHz
- Transistor Type :
- NPN
- Terminal Position :
- BOTTOM
- Collector Base Voltage (VCBO) :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Max Power Dissipation :
- 625mW
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Length :
- 6.35mm
- Element Configuration :
- Single
- Datasheets
- MPSA42RLRPG
MPSA42RLRPG Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRPG Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
MPSA42RLRPG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRPG Applications
There are a lot of ON Semiconductor
MPSA42RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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