MPSA42RLRPG
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- Mfr.Part #
- MPSA42RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 18,138
- In Stock ：
- 18,138
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 300V
- Max Collector Current :
- 500mA
- Gain Bandwidth Product :
- 50MHz
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 300V
- Polarity/Channel Type :
- NPN
- Collector Base Voltage (VCBO) :
- 300V
- Power Dissipation :
- 625mW
- Max Power Dissipation :
- 625mW
- Base Part Number :
- MPSA42
- Length :
- 6.35mm
- Collector Emitter Saturation Voltage :
- 500mV
- Voltage - Rated DC :
- 300V
- Packaging :
- Tape and Box (TB)
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- ECCN Code :
- EAR99
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Number of Terminations :
- 3
- Height :
- 6.35mm
- Pbfree Code :
- yes
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Width :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Max Breakdown Voltage :
- 300V
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 2 days ago)
- Current Rating :
- 500mA
- Transition Frequency :
- 50MHz
- Published :
- 1998
- Frequency :
- 50MHz
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 25
- REACH SVHC :
- No SVHC
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Pins :
- 3
- Radiation Hardening :
- No
- Terminal Position :
- BOTTOM
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- RoHS Status :
- RoHS Compliant
- Datasheets
- MPSA42RLRPG
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRPG Overview
This device has a DC current gain of 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 500mV.A VCE saturation (Max) of 500mV @ 2mA, 20mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 50MHz.A breakdown input voltage of 300V volts can be used.A maximum collector current of 500mA volts is possible.
MPSA42RLRPG Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRPG Applications
There are a lot of ON Semiconductor
MPSA42RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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