MPSA42RLRP
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- Mfr.Part #
- MPSA42RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 1,757
- In Stock ：
- 1,757
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Reach Compliance Code :
- not_compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 300V
- Base Part Number :
- MPSA42
- Operating Temperature :
- -55°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Collector Base Voltage (VCBO) :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 30
- HTS Code :
- 8541.21.00.95
- RoHS Status :
- Non-RoHS Compliant
- Transistor Element Material :
- SILICON
- hFE Min :
- 25
- Transition Frequency :
- 50MHz
- Polarity/Channel Type :
- NPN
- Collector Emitter Saturation Voltage :
- 500mV
- Lead Free :
- Contains Lead
- Qualification Status :
- Not Qualified
- Voltage - Rated DC :
- 300V
- Max Power Dissipation :
- 625mW
- JESD-609 Code :
- e0
- Packaging :
- Tape and Box (TB)
- Gain Bandwidth Product :
- 50MHz
- Terminal Position :
- BOTTOM
- JESD-30 Code :
- O-PBCY-T3
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Application :
- AMPLIFIER
- ECCN Code :
- EAR99
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Peak Reflow Temperature (Cel) :
- 240
- Number of Elements :
- 1
- Transistor Type :
- NPN
- Collector Emitter Voltage (VCEO) :
- 500mV
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Current Rating :
- 500mA
- Pin Count :
- 3
- Mount :
- Through Hole
- Published :
- 1998
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheets
- MPSA42RLRP
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSA42RLRP Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRP Applications
There are a lot of ON Semiconductor
MPSA42RLRP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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