MPSA42RLRP
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- Mfr.Part #
- MPSA42RLRP
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 1,757
- In Stock ：
- 1,757
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Saturation Voltage :
- 500mV
- Collector Base Voltage (VCBO) :
- 300V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Reach Compliance Code :
- not_compliant
- Qualification Status :
- Not Qualified
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 300V
- Pin Count :
- 3
- Polarity/Channel Type :
- NPN
- Packaging :
- Tape and Box (TB)
- Mount :
- Through Hole
- JESD-609 Code :
- e0
- Element Configuration :
- Single
- Collector Emitter Voltage (VCEO) :
- 500mV
- Number of Terminations :
- 3
- Voltage - Rated DC :
- 300V
- Transistor Element Material :
- SILICON
- Emitter Base Voltage (VEBO) :
- 6V
- Mounting Type :
- Through Hole
- Current Rating :
- 500mA
- RoHS Status :
- Non-RoHS Compliant
- HTS Code :
- 8541.21.00.95
- Lead Free :
- Contains Lead
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Max Power Dissipation :
- 625mW
- Transition Frequency :
- 50MHz
- Gain Bandwidth Product :
- 50MHz
- Number of Elements :
- 1
- hFE Min :
- 25
- Base Part Number :
- MPSA42
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Max Collector Current :
- 500mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- JESD-30 Code :
- O-PBCY-T3
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Published :
- 1998
- Peak Reflow Temperature (Cel) :
- 240
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Datasheets
- MPSA42RLRP
MPSA42RLRP Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRP Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 25 @ 1mA 10V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 500mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
MPSA42RLRP Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRP Applications
There are a lot of ON Semiconductor
MPSA42RLRP applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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