MPSA42RLRFG
- Mfr.Part #
- MPSA42RLRFG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 18,681
- In Stock :
- 18,681
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Type :
- NPN
- JESD-30 Code :
- O-PBCY-T3
- Transition Frequency :
- 50MHz
- Voltage - Rated DC :
- 300V
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Element Configuration :
- Single
- Number of Elements :
- 1
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Collector Emitter Breakdown Voltage :
- 300V
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 500mV
- Reach Compliance Code :
- Unknown
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 625mW
- Base Part Number :
- MPSA42
- RoHS Status :
- RoHS Compliant
- Gain Bandwidth Product :
- 50MHz
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Operating Temperature :
- -55°C~150°C TJ
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity/Channel Type :
- NPN
- Terminal Position :
- BOTTOM
- Collector Emitter Voltage (VCEO) :
- 500mV
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Published :
- 2005
- Packaging :
- Tape and Box (TB)
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Max Collector Current :
- 500mA
- HTS Code :
- 8541.21.00.95
- Peak Reflow Temperature (Cel) :
- 260
- Qualification Status :
- Not Qualified
- hFE Min :
- 25
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 300V
- Datasheets
- MPSA42RLRFG

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42RLRFG Overview
In this device, the DC current gain is 25 @ 1mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A collector emitter saturation voltage of 500mV ensures maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 2mA, 20mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (500mA).50MHz is present in the transition frequency.Maximum collector currents can be below 500mA volts.
MPSA42RLRFG Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRFG Applications
There are a lot of ON Semiconductor
MPSA42RLRFG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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