MPSA42RLRAG
- Mfr.Part #
- MPSA42RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 5,337
- In Stock :
- 5,337
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Operating Temperature :
- -55°C~150°C TJ
- Max Collector Current :
- 500mA
- Number of Elements :
- 1
- Polarity/Channel Type :
- NPN
- Max Breakdown Voltage :
- 300V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Width :
- 4.19mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Voltage - Rated DC :
- 300V
- Weight :
- 4.535924g
- Number of Pins :
- 3
- Surface Mount :
- No
- Height :
- 5.33mm
- Number of Terminations :
- 3
- JESD-609 Code :
- e1
- Emitter Base Voltage (VEBO) :
- 6V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Base Voltage (VCBO) :
- 300V
- RoHS Status :
- RoHS Compliant
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- Base Part Number :
- MPSA42
- ECCN Code :
- EAR99
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Transition Frequency :
- 50MHz
- Frequency :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Max Power Dissipation :
- 625mW
- Transistor Type :
- NPN
- Published :
- 2009
- Collector Emitter Voltage (VCEO) :
- 300V
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 500mV
- Power Dissipation :
- 625mW
- Pin Count :
- 3
- Length :
- 5.2mm
- REACH SVHC :
- No SVHC
- hFE Min :
- 25
- Lead Free :
- Lead Free
- Current Rating :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gain Bandwidth Product :
- 50MHz
- Datasheets
- MPSA42RLRAG
MPSA42RLRAG Documents

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA42RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MPSA42RLRAG Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRAG Applications
There are a lot of ON Semiconductor
MPSA42RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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