MPSA42RLRAG
- Mfr.Part #
- MPSA42RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 5,337
- In Stock :
- 5,337
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e1
- Number of Pins :
- 3
- Current Rating :
- 500mA
- Collector Emitter Voltage (VCEO) :
- 300V
- Max Breakdown Voltage :
- 300V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Base Part Number :
- MPSA42
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Operating Temperature :
- -55°C~150°C TJ
- Max Power Dissipation :
- 625mW
- Surface Mount :
- No
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Transistor Type :
- NPN
- Length :
- 5.2mm
- Frequency :
- 50MHz
- Packaging :
- Tape and Reel (TR)
- Emitter Base Voltage (VEBO) :
- 6V
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Published :
- 2009
- Radiation Hardening :
- No
- Pin Count :
- 3
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Transition Frequency :
- 50MHz
- REACH SVHC :
- No SVHC
- Lead Free :
- Lead Free
- Gain Bandwidth Product :
- 50MHz
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Polarity/Channel Type :
- NPN
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Height :
- 5.33mm
- Mounting Type :
- Through Hole
- ECCN Code :
- EAR99
- RoHS Status :
- RoHS Compliant
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Collector Emitter Saturation Voltage :
- 500mV
- hFE Min :
- 25
- Width :
- 4.19mm
- Max Collector Current :
- 500mA
- Voltage - Rated DC :
- 300V
- Collector Emitter Breakdown Voltage :
- 300V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Collector Base Voltage (VCBO) :
- 300V
- Terminal Position :
- BOTTOM
- Datasheets
- MPSA42RLRAG

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA42RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MPSA42RLRAG Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRAG Applications
There are a lot of ON Semiconductor
MPSA42RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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