MPSA42RLRAG
- Mfr.Part #
- MPSA42RLRAG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 5,337
- In Stock :
- 5,337
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 500mV
- Number of Pins :
- 3
- Gain Bandwidth Product :
- 50MHz
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- REACH SVHC :
- No SVHC
- Max Power Dissipation :
- 625mW
- Published :
- 2009
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Voltage (VCEO) :
- 300V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- JESD-609 Code :
- e1
- Base Part Number :
- MPSA42
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Weight :
- 4.535924g
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- RoHS Compliant
- Transistor Type :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Current Rating :
- 500mA
- Collector Base Voltage (VCBO) :
- 300V
- hFE Min :
- 25
- Collector Emitter Breakdown Voltage :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Elements :
- 1
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 25 @ 1mA 10V
- Transition Frequency :
- 50MHz
- Element Configuration :
- Single
- Terminal Position :
- BOTTOM
- Surface Mount :
- No
- Lead Free :
- Lead Free
- Max Breakdown Voltage :
- 300V
- Height :
- 5.33mm
- Max Collector Current :
- 500mA
- Power Dissipation :
- 625mW
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- Width :
- 4.19mm
- Voltage - Rated DC :
- 300V
- Length :
- 5.2mm
- Frequency :
- 50MHz
- Datasheets
- MPSA42RLRAG
MPSA42RLRAG Documents

NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA42RLRAG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 25 @ 1mA 10V.The collector emitter saturation voltage is 500mV, which allows for maximum design flexibility.When VCE saturation is 500mV @ 2mA, 20mA, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 50MHz.This device can take an input voltage of 300V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MPSA42RLRAG Features
the DC current gain for this device is 25 @ 1mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RLRAG Applications
There are a lot of ON Semiconductor
MPSA42RLRAG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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