MPSA42RL1G
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- Mfr.Part #
- MPSA42RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 24,530
- In Stock ：
- 24,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Max Breakdown Voltage :
- 300V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- JESD-609 Code :
- e1
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Terminal Position :
- BOTTOM
- Polarity/Channel Type :
- NPN
- Element Configuration :
- Single
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 25
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 19 hours ago)
- Frequency :
- 50MHz
- ECCN Code :
- EAR99
- Transition Frequency :
- 50MHz
- Voltage - Rated DC :
- 300V
- Max Collector Current :
- 500mA
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Base Part Number :
- MPSA42
- Collector Emitter Saturation Voltage :
- 500mV
- Current Rating :
- 500mA
- Peak Reflow Temperature (Cel) :
- 260
- RoHS Status :
- RoHS Compliant
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Pin Count :
- 3
- Collector Emitter Voltage (VCEO) :
- 300V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Base Voltage (VCBO) :
- 300V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Power Dissipation :
- 625mW
- Transistor Type :
- NPN
- Power Dissipation :
- 625mW
- Pbfree Code :
- yes
- Published :
- 2009
- REACH SVHC :
- No SVHC
- Gain Bandwidth Product :
- 50MHz
- Collector Emitter Breakdown Voltage :
- 300V
- Datasheets
- MPSA42RL1G
MPSA42RL1G Documents
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA42RL1G Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA42RL1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RL1G Applications
There are a lot of ON Semiconductor
MPSA42RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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