MPSA42RL1G
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- Mfr.Part #
- MPSA42RL1G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.5A TO92
- Stock
- 24,530
- In Stock ：
- 24,530
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- ECCN Code :
- EAR99
- Max Power Dissipation :
- 625mW
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Number of Elements :
- 1
- JESD-609 Code :
- e1
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- Max Collector Current :
- 500mA
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 300V
- Base Part Number :
- MPSA42
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 50MHz
- Collector Emitter Saturation Voltage :
- 500mV
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Frequency :
- 50MHz
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Max Breakdown Voltage :
- 300V
- Surface Mount :
- No
- Number of Pins :
- 3
- Pin Count :
- 3
- Emitter Base Voltage (VEBO) :
- 6V
- Current Rating :
- 500mA
- Published :
- 2009
- RoHS Status :
- RoHS Compliant
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 19 hours ago)
- Packaging :
- Tape and Reel (TR)
- Gain Bandwidth Product :
- 50MHz
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Power Dissipation :
- 625mW
- Terminal Position :
- BOTTOM
- hFE Min :
- 25
- Collector Base Voltage (VCBO) :
- 300V
- Collector Emitter Voltage (VCEO) :
- 300V
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -55°C~150°C TJ
- Collector Emitter Breakdown Voltage :
- 300V
- Datasheets
- MPSA42RL1G
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Reel (TR) Through Hole
MPSA42RL1G Overview
In this device, the DC current gain is 40 @ 30mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 2mA, 20mA.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 50MHz.Input voltage breakdown is available at 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA42RL1G Features
the DC current gain for this device is 40 @ 30mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 2mA, 20mA
the emitter base voltage is kept at 6V
the current rating of this device is 500mA
a transition frequency of 50MHz
MPSA42RL1G Applications
There are a lot of ON Semiconductor
MPSA42RL1G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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