MPSA42,412
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- Mfr.Part #
- MPSA42,412
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 42,691
- In Stock ：
- 42,691
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Bulk
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- HTS Code :
- 8541.21.00.95
- Collector-Base Capacitance-Max :
- 3pF
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Transition Frequency :
- 50MHz
- Current - Collector (Ic) (Max) :
- 100mA
- VCEsat-Max :
- 0.5 V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Transistor Type :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Frequency - Transition :
- 50MHz
- Power Dissipation-Max (Abs) :
- 0.625W
- Operating Temperature :
- 150°C TJ
- JESD-30 Code :
- O-PBCY-T3
- Reach Compliance Code :
- Unknown
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Terminal Position :
- BOTTOM
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Surface Mount :
- No
- Base Part Number :
- MPSA42
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Power - Max :
- 500mW
- Qualification Status :
- Not Qualified
- Configuration :
- Single
- Pin Count :
- 3
- Number of Elements :
- 1
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Datasheets
- MPSA42,412
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA42,412 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 40 @ 30mA 10V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 2mA, 20mA.The part has a transition frequency of 50MHz.Device displays Collector Emitter Breakdown (300V maximal voltage).
MPSA42,412 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA42,412 Applications
There are a lot of NXP USA Inc.
MPSA42,412 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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