MPSA42,126
- Mfr.Part #
- MPSA42,126
- Manufacturer
- NXP Semiconductors
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 300V 0.1A TO92-3
- Stock
- 182
- In Stock :
- 182
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- Manufacturer :
- NXP Semiconductors
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2009
- Power Dissipation-Max (Abs) :
- 0.625W
- Transistor Type :
- NPN
- Qualification Status :
- Not Qualified
- Current - Collector (Ic) (Max) :
- 100mA
- JESD-30 Code :
- O-PBCY-T3
- Terminal Finish :
- Matte Tin (Sn)
- Transistor Application :
- AMPLIFIER
- Configuration :
- Single
- Number of Terminations :
- 3
- Base Part Number :
- MPSA42
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 2mA, 20mA
- Terminal Position :
- BOTTOM
- Transition Frequency :
- 50MHz
- VCEsat-Max :
- 0.5 V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- RoHS Status :
- ROHS3 Compliant
- Number of Elements :
- 1
- Reach Compliance Code :
- Unknown
- Power - Max :
- 500mW
- HTS Code :
- 8541.21.00.95
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Frequency - Transition :
- 50MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 30mA 10V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Operating Temperature :
- 150°C TJ
- Collector-Base Capacitance-Max :
- 3pF
- JESD-609 Code :
- e3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Packaging :
- Tape and Box (TB)
- Voltage - Collector Emitter Breakdown (Max) :
- 300V
- Datasheets
- MPSA42,126
,TO-226_straightlead.jpg)
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA42,126 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 30mA 10V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 2mA, 20mA.Parts of this part have transition frequencies of 50MHz.This device displays a 300V maximum voltage - Collector Emitter Breakdown.
MPSA42,126 Features
the DC current gain for this device is 40 @ 30mA 10V
the vce saturation(Max) is 500mV @ 2mA, 20mA
a transition frequency of 50MHz
MPSA42,126 Applications
There are a lot of NXP USA Inc.
MPSA42,126 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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