MPSA29RLRPG
- Mfr.Part #
- MPSA29RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN DARL 100V 0.5A TO92
- Stock
- 43,143
- In Stock :
- 43,143
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Published :
- 2006
- Number of Pins :
- 3
- Length :
- 6.35mm
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- RoHS Status :
- RoHS Compliant
- Collector Emitter Breakdown Voltage :
- 100V
- Pin Count :
- 3
- Continuous Collector Current :
- 500mA
- Max Collector Current :
- 500mA
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 100V
- Frequency - Transition :
- 200MHz
- Lead Free :
- Lead Free
- JESD-609 Code :
- e1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 1.2V
- Collector Base Voltage (VCBO) :
- 100V
- Operating Temperature :
- -55°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 12V
- Width :
- 6.35mm
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 10000
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Polarity :
- NPN
- Packaging :
- Cut Tape (CT)
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Weight :
- 4.535924g
- Transition Frequency :
- 200MHz
- Radiation Hardening :
- No
- Number of Elements :
- 1
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 week ago)
- Base Part Number :
- MPSA29
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Max Breakdown Voltage :
- 100V
- Contact Plating :
- Copper, Silver, Tin
- Power Dissipation :
- 625mW
- Current - Collector Cutoff (Max) :
- 500nA
- Height :
- 6.35mm
- Mounting Type :
- Through Hole
- Max Power Dissipation :
- 625mW
- Current Rating :
- 500mA
- Terminal Position :
- BOTTOM
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Pbfree Code :
- yes
- Datasheets
- MPSA29RLRPG

NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Cut Tape (CT) Through Hole
MPSA29RLRPG Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10000 @ 100mA 5V.The collector emitter saturation voltage is 1.2V, which allows for maximum design flexibility.When VCE saturation is 1.5V @ 100μA, 100mA, transistor means Ic has reached transistors maximum value (saturated).Continuous collector voltage should be kept at 500mA for high efficiency.Emitter base voltages of 12V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.In the part, the transition frequency is 200MHz.This device can take an input voltage of 100V volts before it breaks down.A maximum collector current of 500mA volts can be achieved.
MPSA29RLRPG Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 500mA
a transition frequency of 200MHz
MPSA29RLRPG Applications
There are a lot of ON Semiconductor
MPSA29RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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