MPSA29RLRPG

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

hFE Min :

10000

Continuous Collector Current :

500mA

Radiation Hardening :

No

Current - Collector Cutoff (Max) :

500nA

Number of Terminations :

3

Width :

6.35mm

Terminal Position :

BOTTOM

Voltage - Rated DC :

100V

Power Dissipation :

625mW

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Length :

6.35mm

Operating Temperature :

-55°C~150°C TJ

Collector Base Voltage (VCBO) :

100V

Height :

6.35mm

Time@Peak Reflow Temperature-Max (s) :

40

Collector Emitter Saturation Voltage :

1.2V

Emitter Base Voltage (VEBO) :

12V

Mounting Type :

Through Hole

Collector Emitter Breakdown Voltage :

100V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Cut Tape (CT)

Transistor Element Material :

SILICON

Base Part Number :

MPSA29

Pbfree Code :

yes

Lead Free :

Lead Free

Collector Emitter Voltage (VCEO) :

100V

Pin Count :

3

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Transistor Type :

NPN - Darlington

Max Breakdown Voltage :

100V

Transition Frequency :

200MHz

Peak Reflow Temperature (Cel) :

260

Number of Elements :

1

Weight :

4.535924g

Package / Case :

TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)

ECCN Code :

EAR99

Number of Pins :

3

Current Rating :

500mA

JESD-609 Code :

e1

Max Collector Current :

500mA

Transistor Application :

AMPLIFIER

Frequency - Transition :

200MHz

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

RoHS Status :

RoHS Compliant

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Surface Mount :

No

Contact Plating :

Copper, Silver, Tin

Max Power Dissipation :

625mW

Published :

2006

Polarity :

NPN

Element Configuration :

Single