MPSA29G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Length :

5.2mm

DC Current Gain (hFE) (Min) @ Ic, Vce :

10000 @ 100mA 5V

Transistor Type :

NPN - Darlington

Voltage - Rated DC :

100V

Transistor Element Material :

SILICON

Base Part Number :

MPSA29

REACH SVHC :

Unknown

RoHS Status :

RoHS Compliant

Vce Saturation (Max) @ Ib, Ic :

1.5V @ 100µA, 100mA

Height :

5.33mm

Lead Free :

Lead Free

Pbfree Code :

yes

Mounting Type :

Through Hole

Number of Elements :

1

Terminal Position :

BOTTOM

Polarity :

NPN

Peak Reflow Temperature (Cel) :

260

Lifecycle Status :

LAST SHIPMENTS (Last Updated: 1 week ago)

Continuous Collector Current :

500mA

Max Collector Current :

500mA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Current Rating :

500mA

Collector Base Voltage (VCBO) :

100V

Packaging :

Bulk

Current - Collector Cutoff (Max) :

500nA

Collector Emitter Breakdown Voltage :

100V

Width :

4.19mm

Collector Emitter Voltage (VCEO) :

100V

Power Dissipation :

625mW

Number of Pins :

3

Collector Emitter Saturation Voltage :

1.2V

Surface Mount :

No

Transistor Application :

AMPLIFIER

ECCN Code :

EAR99

Frequency - Transition :

200MHz

hFE Min :

10000

Time@Peak Reflow Temperature-Max (s) :

40

JESD-609 Code :

e1

Terminal Finish :

Tin/Silver/Copper (Sn/Ag/Cu)

Radiation Hardening :

No

Published :

2006

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Element Configuration :

Single

Max Power Dissipation :

625mW

Number of Terminations :

3

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Emitter Base Voltage (VEBO) :

12V

Transition Frequency :

200MHz

Weight :

4.535924g