MPSA28
- Mfr.Part #
- MPSA28
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 0.5A TO92
- Stock
- 21,895
- In Stock :
- 21,895
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 12V
- Qualification Status :
- Not Qualified
- Transistor Element Material :
- SILICON
- Mount :
- Through Hole
- Pbfree Code :
- No
- Collector Emitter Saturation Voltage :
- 1.2V
- Pin Count :
- 3
- Published :
- 2006
- Terminal Position :
- BOTTOM
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Breakdown Voltage :
- 80V
- JESD-609 Code :
- e0
- Frequency - Transition :
- 200MHz
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Current Rating :
- 800mA
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Voltage - Rated DC :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Continuous Collector Current :
- 500mA
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Weight :
- 201mg
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Max Breakdown Voltage :
- 80V
- Number of Elements :
- 1
- Current - Collector Cutoff (Max) :
- 500nA
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Transition Frequency :
- 200MHz
- Packaging :
- Bulk
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- Collector Base Voltage (VCBO) :
- 80V
- Max Power Dissipation :
- 625mW
- Number of Pins :
- 3
- RoHS Status :
- Non-RoHS Compliant
- Number of Terminations :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Reach Compliance Code :
- not_compliant
- hFE Min :
- 10000
- Base Part Number :
- MPSA28
- Power Dissipation :
- 625mW
- Polarity :
- NPN
- Max Collector Current :
- 500mA
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Peak Reflow Temperature (Cel) :
- 240
- Datasheets
- MPSA28
MPSA28 Documents

NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA28 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA28 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 800mA
a transition frequency of 200MHz
MPSA28 Applications
There are a lot of ON Semiconductor
MPSA28 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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