MPSA28
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- Mfr.Part #
- MPSA28
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 0.5A TO92
- Stock
- 3,096
- In Stock ：
- 3,096
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- RoHS Status :
- Non-RoHS Compliant
- Polarity :
- NPN
- Current Rating :
- 800mA
- Number of Elements :
- 1
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 80V
- Pbfree Code :
- No
- Emitter Base Voltage (VEBO) :
- 12V
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 80V
- Frequency - Transition :
- 200MHz
- Qualification Status :
- Not Qualified
- Operating Temperature :
- -55°C~150°C TJ
- Lead Free :
- Lead Free
- Reach Compliance Code :
- not_compliant
- Pin Count :
- 3
- Voltage - Rated DC :
- 80V
- Packaging :
- Bulk
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- Base Part Number :
- MPSA28
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Collector Emitter Saturation Voltage :
- 1.2V
- Power Dissipation :
- 625mW
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 500nA
- Max Power Dissipation :
- 625mW
- Published :
- 2006
- Weight :
- 201mg
- Terminal Position :
- BOTTOM
- Max Breakdown Voltage :
- 80V
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- hFE Min :
- 10000
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Peak Reflow Temperature (Cel) :
- 240
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Max Collector Current :
- 500mA
- Transition Frequency :
- 200MHz
- JESD-609 Code :
- e0
- Mount :
- Through Hole
- Datasheets
- MPSA28
MPSA28 Documents
NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA28 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA28 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 800mA
a transition frequency of 200MHz
MPSA28 Applications
There are a lot of ON Semiconductor
MPSA28 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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