MPSA28
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- Mfr.Part #
- MPSA28
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 0.5A TO92
- Stock
- 3,096
- In Stock ：
- 3,096
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 800mA
- Collector Emitter Breakdown Voltage :
- 80V
- hFE Min :
- 10000
- Mounting Type :
- Through Hole
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Voltage - Rated DC :
- 80V
- Number of Elements :
- 1
- Transistor Element Material :
- SILICON
- Pbfree Code :
- No
- Time@Peak Reflow Temperature-Max (s) :
- 30
- Terminal Position :
- BOTTOM
- Power Dissipation :
- 625mW
- Packaging :
- Bulk
- Base Part Number :
- MPSA28
- Weight :
- 201mg
- JESD-609 Code :
- e0
- Transition Frequency :
- 200MHz
- Reach Compliance Code :
- not_compliant
- Lead Free :
- Lead Free
- Frequency - Transition :
- 200MHz
- Continuous Collector Current :
- 500mA
- Mount :
- Through Hole
- Qualification Status :
- Not Qualified
- Terminal Finish :
- Tin/Lead (Sn/Pb)
- Peak Reflow Temperature (Cel) :
- 240
- RoHS Status :
- Non-RoHS Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 week ago)
- Transistor Type :
- NPN - Darlington
- Number of Terminations :
- 3
- Polarity :
- NPN
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 500mA
- Element Configuration :
- Single
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 12V
- Operating Temperature :
- -55°C~150°C TJ
- Collector Base Voltage (VCBO) :
- 80V
- Max Breakdown Voltage :
- 80V
- Published :
- 2006
- Collector Emitter Saturation Voltage :
- 1.2V
- Max Power Dissipation :
- 625mW
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Current - Collector Cutoff (Max) :
- 500nA
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Datasheets
- MPSA28
NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA28 Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 12V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 800mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 200MHz.Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA28 Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.2V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 12V
the current rating of this device is 800mA
a transition frequency of 200MHz
MPSA28 Applications
There are a lot of ON Semiconductor
MPSA28 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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