MPSA27G
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- Mfr.Part #
- MPSA27G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 0.5A TO92
- Stock
- 48,639
- In Stock ：
- 48,639
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 500mA
- Transistor Type :
- NPN - Darlington
- Published :
- 2007
- hFE Min :
- 10000
- Weight :
- 4.535924g
- Max Collector Current :
- 500mA
- Packaging :
- Bulk
- Pbfree Code :
- yes
- Polarity :
- NPN
- Emitter Base Voltage (VEBO) :
- 10V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 10000 @ 100mA 5V
- Collector Base Voltage (VCBO) :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MPSA27
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Power Dissipation :
- 625mW
- Element Configuration :
- Single
- Transistor Application :
- AMPLIFIER
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 625mW
- RoHS Status :
- RoHS Compliant
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Width :
- 4.19mm
- Collector Emitter Saturation Voltage :
- 1.5V
- Peak Reflow Temperature (Cel) :
- 260
- Terminal Position :
- BOTTOM
- REACH SVHC :
- Unknown
- Height :
- 5.33mm
- Surface Mount :
- No
- Number of Pins :
- 3
- Lifecycle Status :
- LAST SHIPMENTS (Last Updated: 1 day ago)
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 100µA, 100mA
- Operating Temperature :
- -55°C~150°C TJ
- Length :
- 5.2mm
- Current - Collector Cutoff (Max) :
- 500nA
- Pin Count :
- 3
- Current Rating :
- 500mA
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Transition Frequency :
- 125MHz
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- JESD-609 Code :
- e1
- Number of Elements :
- 1
- Datasheets
- MPSA27G
,TO-226_straightlead.jpg)
NPN - Darlington -55°C~150°C TJ 500nA 1 Elements 3 Terminations SILICON TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA27G Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 100μA, 100mA.A 500mA continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 10V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 500mA for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 125MHz.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MPSA27G Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is 500mA
a transition frequency of 125MHz
MPSA27G Applications
There are a lot of ON Semiconductor
MPSA27G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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