MPSA20G
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- Mfr.Part #
- MPSA20G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.1A TO92
- Stock
- 49,689
- In Stock ：
- 49,689
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Collector Emitter Saturation Voltage :
- 250mV
- Gain Bandwidth Product :
- 125MHz
- Pbfree Code :
- yes
- Mount :
- Through Hole
- Base Part Number :
- MPSA20
- Operating Temperature :
- -55°C~150°C TJ
- Power Dissipation :
- 1.5W
- Frequency :
- 125MHz
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- Number of Pins :
- 3
- HTS Code :
- 8541.21.00.75
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5mA 10V
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e1
- Transistor Application :
- AMPLIFIER
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 625mW
- Emitter Base Voltage (VEBO) :
- 4V
- Collector Emitter Voltage (VCEO) :
- 40V
- Polarity/Channel Type :
- NPN
- Mounting Type :
- Through Hole
- Collector Emitter Breakdown Voltage :
- 40V
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Transition Frequency :
- 125MHz
- Qualification Status :
- Not Qualified
- RoHS Status :
- RoHS Compliant
- Number of Elements :
- 1
- Current Rating :
- 100mA
- Transistor Type :
- NPN
- Voltage - Rated DC :
- 40V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 4V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Position :
- BOTTOM
- Lead Free :
- Lead Free
- Packaging :
- Bulk
- hFE Min :
- 40
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 100mA
- Datasheets
- MPSA20G
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA20G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5mA 10V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 125MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
MPSA20G Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 125MHz
MPSA20G Applications
There are a lot of ON Semiconductor
MPSA20G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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