MPSA20G
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- Mfr.Part #
- MPSA20G
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet
- Download
- Description
- TRANS NPN 40V 0.1A TO92
- Stock
- 49,689
- In Stock ：
- 49,689
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Emitter Base Voltage (VEBO) :
- 4V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 250mV
- Current Rating :
- 100mA
- Lead Free :
- Lead Free
- Transition Frequency :
- 125MHz
- Collector Emitter Voltage (VCEO) :
- 40V
- Terminal Position :
- BOTTOM
- Number of Elements :
- 1
- Max Collector Current :
- 100mA
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 625mW
- Frequency :
- 125MHz
- Pbfree Code :
- yes
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- MPSA20
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Peak Reflow Temperature (Cel) :
- 260
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 1mA, 10mA
- hFE Min :
- 40
- Pin Count :
- 3
- Gain Bandwidth Product :
- 125MHz
- Power Dissipation :
- 1.5W
- Qualification Status :
- Not Qualified
- Polarity/Channel Type :
- NPN
- Published :
- 2006
- RoHS Status :
- RoHS Compliant
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN
- Number of Pins :
- 3
- Operating Temperature :
- -55°C~150°C TJ
- Lifecycle Status :
- OBSOLETE (Last Updated: 1 day ago)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 40 @ 5mA 10V
- Voltage - Rated DC :
- 40V
- Collector Emitter Breakdown Voltage :
- 40V
- Mount :
- Through Hole
- ECCN Code :
- EAR99
- Packaging :
- Bulk
- JESD-609 Code :
- e1
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 4V
- HTS Code :
- 8541.21.00.75
- Datasheets
- MPSA20G
MPSA20G Documents
,TO-226_straightlead.jpg)
NPN -55°C~150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) Bulk Through Hole
MPSA20G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 5mA 10V.With a collector emitter saturation voltage of 250mV, it offers maximum design flexibility.Vce saturation means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 1mA, 10mA.If the emitter base voltage is kept at 4V, a high level of efficiency can be achieved.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 100mA.A transition frequency of 125MHz is present in the part.Collector current can be as low as 100mA volts at its maximum.
MPSA20G Features
the DC current gain for this device is 40 @ 5mA 10V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 1mA, 10mA
the emitter base voltage is kept at 4V
the current rating of this device is 100mA
a transition frequency of 125MHz
MPSA20G Applications
There are a lot of ON Semiconductor
MPSA20G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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