MPSA18RLRPG
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- Mfr.Part #
- MPSA18RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92
- Stock
- 26,095
- In Stock ：
- 26,095
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Emitter Base Voltage (VEBO) :
- 6.5V
- Collector Base Voltage (VCBO) :
- 45V
- Terminal Position :
- BOTTOM
- Collector Emitter Breakdown Voltage :
- 45V
- Transition Frequency :
- 160MHz
- Transistor Application :
- AMPLIFIER
- Max Collector Current :
- 200mA
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Collector Emitter Voltage (VCEO) :
- 300mV
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Voltage - Rated DC :
- 45V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Power Dissipation :
- 625mW
- Packaging :
- Tape and Box (TB)
- Transistor Type :
- NPN
- Base Part Number :
- MPSA18
- Current Rating :
- 200mA
- Additional Feature :
- LOW NOISE
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- JESD-609 Code :
- e1
- Polarity/Channel Type :
- NPN
- Reach Compliance Code :
- Unknown
- Gain Bandwidth Product :
- 160MHz
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- hFE Min :
- 400
- Transistor Element Material :
- SILICON
- RoHS Status :
- RoHS Compliant
- Qualification Status :
- Not Qualified
- Published :
- 2006
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.21.00.75
- Operating Temperature :
- -55°C~150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mount :
- Through Hole
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 5V
- Collector Emitter Saturation Voltage :
- 80mV
- Datasheets
- MPSA18RLRPG
MPSA18RLRPG Documents
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA18RLRPG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 80mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 6.5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 160MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MPSA18RLRPG Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18RLRPG Applications
There are a lot of ON Semiconductor
MPSA18RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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