MPSA18RLRPG
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- Mfr.Part #
- MPSA18RLRPG
- Manufacturer
- onsemi
- Package / Case
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Datasheet
- Download
- Description
- TRANS NPN 45V 0.2A TO92
- Stock
- 26,095
- In Stock ：
- 26,095
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Package / Case :
- TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
- Collector Base Voltage (VCBO) :
- 45V
- Operating Temperature :
- -55°C~150°C TJ
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Max Power Dissipation :
- 625mW
- Published :
- 2006
- Base Part Number :
- MPSA18
- hFE Min :
- 400
- Packaging :
- Tape and Box (TB)
- Polarity/Channel Type :
- NPN
- Qualification Status :
- Not Qualified
- Mount :
- Through Hole
- Emitter Base Voltage (VEBO) :
- 6.5V
- ECCN Code :
- EAR99
- Number of Terminations :
- 3
- Reach Compliance Code :
- Unknown
- Element Configuration :
- Single
- Number of Elements :
- 1
- Transition Frequency :
- 160MHz
- Transistor Element Material :
- SILICON
- Additional Feature :
- LOW NOISE
- Current - Collector Cutoff (Max) :
- 50nA ICBO
- Transistor Type :
- NPN
- Transistor Application :
- AMPLIFIER
- Collector Emitter Breakdown Voltage :
- 45V
- Collector Emitter Saturation Voltage :
- 80mV
- Mounting Type :
- Through Hole
- HTS Code :
- 8541.21.00.75
- Terminal Position :
- BOTTOM
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Max Collector Current :
- 200mA
- Current Rating :
- 200mA
- Collector Emitter Voltage (VCEO) :
- 300mV
- Peak Reflow Temperature (Cel) :
- 260
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 500 @ 10mA 5V
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 45V
- Gain Bandwidth Product :
- 160MHz
- RoHS Status :
- RoHS Compliant
- JESD-609 Code :
- e1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- MPSA18RLRPG
NPN -55°C~150°C TJ 50nA ICBO 1 Elements 3 Terminations SILICON NPN TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) Tape & Box (TB) Through Hole
MPSA18RLRPG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 500 @ 10mA 5V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 80mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 5mA, 50mA.The emitter base voltage can be kept at 6.5V for high efficiency.The current rating of this fuse is 200mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 160MHz.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
MPSA18RLRPG Features
the DC current gain for this device is 500 @ 10mA 5V
a collector emitter saturation voltage of 80mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 6.5V
the current rating of this device is 200mA
a transition frequency of 160MHz
MPSA18RLRPG Applications
There are a lot of ON Semiconductor
MPSA18RLRPG applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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